IS43R16800E-5TL

The IS43R16800E-5TL is a 128 Mbit volatile DRAM device implemented as DDR SDRAM with a parallel memory interface and an 8M × 16 organization. It is packaged in a 66-TSOP II (66-TSSOP, 10.16 mm width) and operates from a 2.3 V to 2.7 V supply range.

Designed for systems that require a compact, parallel DDR memory solution, the device offers a 200 MHz clock frequency, a 700 ps access time metric, and a write cycle time (word/page) of 15 ns, making it suitable where deterministic parallel DRAM capacity and timing are required within a commercial temperature range.

Key Features

• Memory Type  Volatile DRAM implemented as DDR SDRAM with a parallel memory interface for board-level memory applications.
• Density & Organization  128 Mbit total capacity arranged as 8M × 16, providing wide-data-path operation for parallel bus architectures.
• Performance  200 MHz clock frequency with a specified access time of 700 ps and a write cycle time (word/page) of 15 ns to support synchronous DDR access patterns.
• Power  Operates from a 2.3 V to 2.7 V supply, enabling integration into systems with low-voltage DDR power domains.
• Package  Available in a 66-TSOP II / 66-TSSOP package with a 10.16 mm width suitable for compact board layouts.
• Operating Range  Commercial operating temperature range of 0°C to 70°C (TA) for standard temperature applications.
• Manufacturer  Supplied by ISSI (Integrated Silicon Solution Inc), listed as IS43R16800E-5TL.

Typical Applications

• Board-level DDR memory modules  Used as a parallel DDR DRAM component where 128 Mbit density and 16-bit data width are required.
• Embedded system working memory  Provides volatile storage for runtime data in designs that use a parallel memory interface and require low-voltage DDR operation.
• Compact consumer and industrial electronics  Fits compact PCB footprints thanks to the 66-TSOP II package while delivering the specified DDR timing characteristics.

Unique Advantages

• 128 Mbit density in a small package: 8M × 16 organization delivers substantial parallel memory capacity in a 66-TSOP II footprint for space-constrained designs.
• DDR SDRAM timing: 200 MHz clock frequency with 700 ps access time and 15 ns write cycle time supports synchronous DDR access with predictable timing.
• Low-voltage operation: 2.3 V to 2.7 V supply range enables integration with low-voltage system rails.
• Commercial temperature suitability: Rated for 0°C to 70°C for applications operating within standard environmental conditions.
• Standard parallel interface: 16-bit data organization and parallel DRAM format simplify integration into existing parallel memory subsystems.

Why Choose IS43R16800E-5TL?

The IS43R16800E-5TL positions itself as a compact, parallel DDR SDRAM option offering 128 Mbit capacity with an 8M × 16 organization and deterministic timing (200 MHz clock, 700 ps access time). Its low-voltage supply range and 66-TSOP II packaging make it suitable for designs that require a balance of density, timing performance, and a small board footprint.

This device is appropriate for developers and procurement teams specifying parallel DDR memory for commercial-temperature applications where a 16-bit data path and 128 Mbit capacity are required. Manufactured by ISSI, the part provides a clear specification set for system integration and BOM definition.

Request a quote or contact sales to discuss availability, lead times, and volume pricing for the IS43R16800E-5TL.