IS43R16800A-5TL-TR

The IS43R16800A-5TL-TR is a 128‑Mbit DDR SDRAM organized as 8M × 16 with a 16‑bit data path and parallel memory interface. It uses a pipeline architecture with four internal banks and supports two data word accesses per clock cycle to enable high‑speed burst transfers.

This device is intended for designs that require on‑board DDR SDRAM capacity with programmable burst behavior, selectable CAS latency, and standard SSTL‑2 compatible I/O, delivered in a compact 66‑pin TSOP‑II package.

Key Features

• Core & architecture Pipeline architecture with four internal banks to overlap row pre‑charge and active operations for continuous read/write bursts.
• Memory organization & capacity 128‑Mbit capacity organized as 8M × 16 (four banks of 32‑Mbit each) providing a 16‑bit data word size.
• Performance Clock frequency options up to 200 MHz (also supports 125 MHz); access time specified at 700 ps for high‑speed transfers.
• Interface & I/O Parallel DDR SDRAM with SSTL‑2 compatible I/O, differential clock inputs (CLK/CLK), and bi‑directional data strobe (LDQS/UDQS) for registered data capture.
• Timing & programmability Programmable burst length and burst sequence (sequential/interleaved), programmable CAS latency (3 clocks), DLL for I/O alignment, and data mask support for writes.
• Power & power management VDD/VDDQ supply range 2.5 V–2.7 V with Auto Refresh, Self Refresh, Active Power Down and Pre‑charge Power Down modes; 4096 refresh cycles every 64 ms.
• Package & temperature 66‑pin TSOP‑II package (0.400", 10.16 mm width) with specified operating temperature range 0 °C to 70 °C (TA).
• Manufacturing notes Datasheet lists lead‑free availability and standard 66‑TSOP‑II pinout for x16 operation.

Typical Applications

• Board‑level DDR memory expansion Adds 128‑Mbit DDR SDRAM capacity with a 16‑bit data bus for systems that require parallel DDR DRAM.
• High‑speed data buffering Pipeline architecture and dual‑edge data access support burst buffering and streaming data paths.
• Embedded system memory subsystems Suitable for embedded designs that need programmable timing, burst modes and standard SSTL‑2 I/O.

Unique Advantages

• Dual‑edge data access: Two data word accesses per clock cycle increase effective throughput for burst transfers.
• Concurrent bank operation: Four internal banks allow overlapping operations (Active/Pre‑charge) to improve sustained data flow.
• Flexible timing and bursts: Programmable burst length, sequence and CAS latency let designers tune performance to system timing requirements.
• SSTL‑2 compatible I/O with DLL: Differential clock inputs and DLL alignment deliver reliable data capture referenced to clock and data strobe transitions.
• Power management modes: Auto Refresh, Self Refresh and power‑down modes reduce power during idle periods while meeting refresh requirements (4096 refresh cycles/64 ms).
• Compact package: 66‑pin TSOP‑II (10.16 mm width) supports board designs where a slim profile and standard TSOP footprint are required.

Why Choose IS43R16800A-5TL-TR?

The IS43R16800A-5TL-TR delivers a 128‑Mbit DDR SDRAM solution with a 16‑bit data interface, programmable timing, and multiple power management modes—all in a compact 66‑TSOP‑II package. Its pipeline architecture, four internal banks and dual‑edge data access enable efficient burst transfers for high‑throughput board‑level memory requirements.

This device is well suited to designs that need configurable DDR timing and burst behavior with SSTL‑2 I/O compatibility, backed by ISSI technical documentation and datasheet specifications for electrical, timing and functional details.

Request a quote or submit an inquiry for availability and pricing of IS43R16800A-5TL-TR to evaluate it for your next memory subsystem design.