IS43R16320F-6TL-TR
| Part Description |
IC DRAM 128MBIT PAR 66TSOP II |
|---|---|
| Quantity | 415 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP II | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | SSTL_2 | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of IS43R16320F-6TL-TR – IC DRAM 128MBIT PAR 66TSOP II
The IS43R16320F-6TL-TR is a volatile DDR SDRAM device supplied in a 66‑TSOP II package. It implements a 32M × 16 memory organization and supports SSTL_2 signaling for parallel memory interfaces.
Designed for system memory and high-throughput buffering, the device provides a 167 MHz clock operation, 700 ps access time and a 2.3 V–2.7 V supply range, suitable for designs operating within a 0 °C to 70 °C ambient temperature window.
Key Features
- Memory Core Volatile DRAM using SDRAM – DDR technology, organized as 32M × 16 (512 Mbit).
- Performance Clock frequency rated at 167 MHz with an access time of 700 ps and a word/page write cycle time of 15 ns for predictable timing behavior.
- Interface SSTL_2 memory interface for parallel system integration and signaling compatibility.
- Power Supply voltage range of 2.3 V to 2.7 V to support common DDR power domains.
- Package 66‑TSSOP / 66‑TSOP II package (0.400", 10.16 mm width) optimized for board-level assembly.
- Operating Conditions Specified for an ambient operating temperature range of 0 °C to 70 °C (TA).
Typical Applications
- High‑speed memory subsystems — Use as parallel DDR SDRAM for buffering and temporary data storage in systems requiring a 32M × 16 memory organization.
- Network and communications equipment — Implement local packet or frame buffering where SSTL_2 signaling and 167 MHz clocking are required.
- FPGA and processor memory expansion — Provide external DRAM capacity for designs that interface to parallel memory controllers.
Unique Advantages
- DDR SDRAM architecture: Provides synchronous, dual-data-rate operation to match parallel memory controller designs.
- SSTL_2 interface compatibility: Simplifies integration with SSTL_2-compliant systems and signaling domains.
- Compact TSOP II package: 66‑TSSOP form factor (10.16 mm width) supports high-density board layouts.
- Specified timing metrics: 167 MHz clock and 700 ps access time offer clear timing targets for system design and validation.
- Narrow supply range: 2.3 V–2.7 V supply requirement aligns with typical DDR power rails for consistent operation.
Why Choose IS43R16320F-6TL-TR?
The IS43R16320F-6TL-TR positions itself as a straightforward DDR SDRAM building block for designs that require a 32M × 16 memory organization with SSTL_2 signaling. Its specified clock, access time, and package details make it suitable for system-level memory expansion and buffering where predictable timing and compact board footprint are important.
This device is appropriate for engineers and procurement teams designing or sourcing parallel DDR memory subsystems that operate within the provided voltage and temperature envelopes, and that require clear electrical and mechanical specifications for integration.
Request a quote or submit a request for pricing and availability to evaluate IS43R16320F-6TL-TR for your next design.
