IS43R16800C-5TL

IC DRAM 128MBIT PAR 66TSOP II
Part Description

IC DRAM 128MBIT PAR 66TSOP II

Quantity 1,017 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOP IIMemory FormatDRAMTechnologySDRAM - DDR
Memory Size128 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS43R16800C-5TL – IC DRAM 128MBIT PAR 66TSOP II

The IS43R16800C-5TL is a 128 Mbit double data rate (DDR) synchronous DRAM organized as 8M × 16 with a 4‑bank architecture. It implements DDR timing and signaling including bidirectional data strobe (DQS) and differential clock inputs, delivering two data transfers per clock cycle.

Designed for parallel DDR memory applications, the device supports clock rates up to 200 MHz, operates from a 2.3 V to 2.7 V supply range, and is supplied in a 66‑pin TSOP II (66‑TSSOP) package with a commercial operating temperature range of 0 °C to +70 °C.

Key Features

  • DDR architecture Double data rate operation with two data transfers per clock cycle, DLL alignment of DQ/DQS, and commands entered on each positive CLK edge.
  • Memory organization & capacity 128 Mbit organized as 8M × 16 (4 banks of 2,097,152 words × 16 bits) with row addresses A0–A11 and column addresses A0–A8.
  • Performance & timing Clock frequency up to 200 MHz, access time ~700 ps, programmable CAS latency (2.0 / 2.5 / 3.0) and programmable burst length (2 / 4 / 8); write cycle time (word page) 15 ns.
  • Interface & signals SSTL_2 I/O standard with differential CLK/ /CLK, bidirectional DQS (LDQS/UDQS), data mask signals (LDM/UDM) and 16‑bit data I/O (DQ0–DQ15).
  • Power VDD / VDDQ supply range 2.3 V to 2.7 V (nominal 2.5 V ±0.2 V specified in datasheet variants).
  • Package & temperature 66‑pin TSOP II (66‑TSSOP, 0.400" / 10.16 mm width) package; commercial temperature range 0 °C to +70 °C.
  • Refresh & reliability Standard DDR refresh: 4,096 refresh cycles per 64 ms with auto refresh and self refresh support across 4 banks.

Unique Advantages

  • High effective data throughput: Double data rate transfers and DQS‑referenced I/O enable data capture on both edges of the strobe for increased transfer efficiency.
  • Configurable latency and burst modes: Programmable CAS latency and burst length provide flexibility to tune memory timing for different system requirements.
  • SSTL_2 compatible I/O: Differential clocking, DQS, and data mask support standard DDR signaling for parallel memory interfaces.
  • Compact, industry‑standard package: 66‑pin TSOP II (66‑TSSOP) package provides a common x16 DRAM footprint for board integration.
  • Commercial temperature rating: Specified for 0 °C to +70 °C operation for commercial environments.

Why Choose IC DRAM 128MBIT PAR 66TSOP II?

The IS43R16800C-5TL delivers a compact 128 Mbit DDR SDRAM solution with up to 200 MHz clock capability, programmable latency and burst modes, and SSTL_2 I/O signalling. Its 8M × 16 organization and 4‑bank architecture provide standard DDR memory functionality in a 66‑pin TSOP II package.

This device is well suited to designs that require a parallel 16‑bit DDR memory interface with standard supply rails (2.3 V–2.7 V) and commercial temperature operation, offering straightforward integration where SSTL_2 signaling and a 66‑TSOP II footprint are required.

If you need pricing, lead times or technical clearance for IS43R16800C-5TL, request a quote or submit a technical inquiry to receive availability and ordering information.

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