IS43R16800E-6TLI

The IS43R16800E-6TLI is a 128 Mbit parallel DRAM device implemented as DDR SDRAM with an 8M × 16 memory organization. It delivers synchronous, parallel memory storage intended for systems that require a compact, mid-density DRAM solution operating over a broad temperature range.

Key Features

• Memory Core 128 Mbit DRAM organized as 8M × 16, providing a standard parallel memory array for system buffering and temporary storage.
• Technology & Performance DDR SDRAM technology with a clock frequency rating of 166 MHz and access time of 700 ps for synchronous data transactions.
• Timing Write cycle time (word/page) specified at 12 ns, enabling deterministic write timing for parallel memory operations.
• Power Operates from a 2.3 V to 2.7 V supply range, supporting low-voltage system designs.
• Package Supplied in a 66-TSSOP / 66-TSOP II package (0.400", 10.16 mm width), suitable for PCB layouts requiring a compact TSOP footprint.
• Temperature Range Rated for operation from −40 °C to 85 °C (TA), supporting a wide ambient temperature envelope for many embedded and industrial applications.

Typical Applications

• Embedded Systems Use as parallel SDRAM memory in embedded designs that require a 128 Mbit DDR device with an 8M × 16 organization.
• Industrial Electronics Suited to equipment operating across −40 °C to 85 °C where a compact TSOP memory package and low-voltage operation are required.
• Systems with Parallel Memory Interfaces Fits designs that require synchronous parallel DRAM buffering or temporary storage with a 166 MHz clock rating and 12 ns write-cycle timing.

Unique Advantages

• Compact TSOP II Package: The 66-TSSOP (66-TSOP II) footprint (0.400", 10.16 mm width) enables higher board density and compatibility with space-constrained PCBs.
• Mid-Density, Parallel Organization: 128 Mbit capacity organized as 8M × 16 provides a balanced density and data width for parallel memory architectures.
• Deterministic Timing: Specified access time of 700 ps and 12 ns write-cycle time support predictable performance for synchronous memory operations.
• Low-Voltage Operation: 2.3 V to 2.7 V supply range accommodates low-voltage system designs.
• Broad Operating Temperature: Rated −40 °C to 85 °C for operation in a wide range of ambient conditions.

Why Choose IC DRAM 128MBIT PAR 66TSOP II?

The IS43R16800E-6TLI positions itself as a compact, mid-density DDR SDRAM option for designers needing a parallel 128 Mbit memory organized as 8M × 16. Its combination of a 166 MHz clock rating, 700 ps access time, and 12 ns write-cycle timing offers predictable synchronous performance for systems requiring parallel DRAM buffering.

With a low-voltage supply range (2.3 V–2.7 V) and an industrial temperature rating (−40 °C to 85 °C), this device is suited to embedded and industrial designs that need a space-efficient TSOP II package and stable memory behavior across temperature extremes.

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