IS43R32400E-4BL

The IS43R32400E-4BL is a 128 Mbit volatile DDR SDRAM organized as 4M × 32 with a parallel memory interface. It is supplied in a 144‑LFBGA (12×12) package and is specified for operation from 0°C to 70°C (TA).

With a 250 MHz clock frequency, 700 ps access time and a write cycle time (word/page) of 16 ns, this device targets designs that require synchronous parallel DDR memory with well-defined timing and supply requirements (2.4 V–2.6 V).

Key Features

• Memory Core / Architecture 128 Mbit DDR SDRAM organized as 4M × 32 for parallel data word widths and predictable memory organization.
• Performance 250 MHz clock frequency with 700 ps access time and a 16 ns write cycle time (word/page) to support synchronous DRAM timing requirements.
• Interface Parallel DDR memory interface for direct connection to systems that require synchronous, parallel DRAM.
• Power Supply Operates from a 2.4 V to 2.6 V supply, matching designs that use this DDR voltage range.
• Package 144‑LFBGA (12×12) BGA package suitable for surface-mount assembly and compact PCB layouts.
• Operating Range Specified operating ambient temperature from 0°C to 70°C (TA).
• Memory Type Volatile DRAM (SDRAM – DDR) intended for temporary system memory and buffering applications.

Typical Applications

• Embedded Systems Provides 128 Mbit of parallel DDR SDRAM for embedded designs that require synchronous system memory in a compact BGA package.
• Frame Buffering and Video Subsystems Synchronous DDR operation and 4M × 32 organization support buffering and temporary storage where parallel access and timing are required.
• Network and Communication Equipment Use as parallel SDRAM for packet buffering or temporary data storage in systems designed around DDR synchronous memory interfaces.

Unique Advantages

• Clear memory organization: 4M × 32 arrangement simplifies bus interface planning and address mapping for parallel systems.
• Defined timing performance: 250 MHz clock and 700 ps access time provide measurable timing characteristics for system design and validation.
• Standard DDR voltage range: 2.4 V–2.6 V supply aligns with common DDR power domains in supporting designs.
• Compact BGA package: 144‑LFBGA (12×12) enables high-density board layouts while supporting surface-mount assembly.
• Commercial temperature rating: 0°C–70°C operating range suited to typical commercial-grade deployments.

Why Choose IC DRAM 128MBIT PAR 144LFBGA?

The IS43R32400E-4BL positions itself as a straightforward, specification-driven parallel DDR SDRAM option when a 128 Mbit, 4M × 32 memory organization is required. Its documented timing (250 MHz clock, 700 ps access) and 2.4 V–2.6 V supply make it suitable for designs that need predictable synchronous DRAM behavior in a compact 144‑LFBGA package.

This device is suited to engineers and procurement teams designing or sourcing commercial-grade synchronous parallel memory for embedded systems, buffering, and communication equipment where the provided electrical, timing, and package specifications match system requirements.

To request a quote or submit an availability inquiry for IS43R32400E-4BL, contact the sales team or request a formal quote through your purchasing channel.