IS43R83200B-6TL

The IS43R83200B-6TL is a 256 Mbit double data rate (DDR) synchronous DRAM organized as 32M x 8, delivered in a 66-pin TSOP II package. It implements a parallel SSTL_2-compatible interface with DDR architecture, bidirectional DQS, differential clock inputs and an internal DLL for timing alignment.

This device is intended for designs that require compact, parallel DDR memory with programmable CAS latency and burst length, offering refresh management and multi-bank operation for system memory buffering and similar embedded memory functions.

Key Features

• DDR Synchronous Architecture Double data rate operation with two transfers per clock cycle, bidirectional data strobe (DQS) and differential clock inputs (CLK and /CLK).
• Memory Organization & Capacity 256 Mbit capacity organized as 32M × 8 with 4-bank operation (BA0, BA1) and support for row/column addressing (A0–A12, A0–A9).
• Performance Device -6 timing and specification lists a clock frequency around 166 MHz and access timing on the order of 700 ps; datasheet notes support for clock rates up to 200 MHz depending on timing configuration.
• Programmable Timing and Burst Programmable CAS latency (2.0 / 2.5 / 3.0), selectable burst length (2 / 4 / 8) and burst type (sequential/interleave).
• Data Integrity & Refresh Internal DLL for DQ/DQS alignment, auto refresh and self refresh support, and 8192 refresh cycles per 64 ms (4-bank concurrent refresh).
• Power Supply voltage range VDD/VDDQ = 2.3 V to 2.7 V (nominal 2.5 V variants referenced in datasheet).
• Package & Temperature 66-pin TSOP II (66-TSSOP, 0.400" / 10.16 mm width) package; commercial operating temperature range 0°C to 70°C.

Typical Applications

• Embedded memory subsystems — Compact 256 Mbit parallel DDR storage for systems that require a TSOP II form factor and SSTL_2-compatible interface.
• Buffering and caching — Multi-bank DDR architecture and programmable burst modes support memory buffering and burst-oriented data flows.
• System-level DDR modules — Suitable where parallel DDR SDRAM is needed with selectable CAS latency and auto/self-refresh management.

Unique Advantages

• DDR data rate with DQS support: Bidirectional data strobe and DLL alignment enable reliable double data rate transfers referenced to both edges of DQS.
• Flexible timing options: Programmable CAS latency and burst lengths allow tuning for latency vs. throughput trade-offs in system designs.
• 4-bank architecture: Four internal banks and concurrent refresh support improve access flexibility and refresh efficiency for sustained operations.
• Compact TSOP II package: 66-pin TSOP II provides a small footprint option (10.16 mm width) for space-constrained board layouts.
• Broad supply tolerance: 2.3 V–2.7 V operating range supports nominal 2.5 V DDR system rails and compatibility with SSTL_2 interface levels.
• Refresh and low-power modes: Auto refresh and self refresh reduce system-level refresh management overhead and support low-activity scenarios.

Why Choose IS43R83200B-6TL?

The IS43R83200B-6TL positions itself as a compact, parallel DDR SDRAM option for designs that require 256 Mbit density with programmable timing, multi-bank operation and SSTL_2-style signaling. Its combination of DLL-based timing alignment, DQS support and selectable CAS latency provides designers with the control needed to balance latency and throughput in embedded memory subsystems.

This device is appropriate for engineers specifying parallel DDR memory in space-conscious board layouts using the 66-pin TSOP II package, and for projects that require commercial-temperature operation and standard 2.5 V DDR supply compatibility. The product’s refresh features and multi-bank architecture offer predictable behavior for sustained memory use in system designs.

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