 | | IS45S16160D-7TLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 961 | |
 | | IS45S16160D-7TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 130 | |
 | | IS45S16160D-7TLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 411 | |
 | | IS45S16160D-7TLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 719 | |
 | | IS45S16160G-6CTLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 357 | |
 | | IS45S16160G-6CTLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,532 | |
 | | IS45S16160G-6TLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 205 | |
 | | IS45S16160G-6TLA1 -TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 821 | |
 | | IS45S16160G-7BLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 266 | |
 | | IS45S16160G-7BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,640 | |
 | | IS45S16160G-7BLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,574 | |
 | | IS45S16160G-7BLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 392 | |
 | | IS45S16160G-7CTLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 94 | |
 | | IS45S16160G-7CTLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,253 | |
 | | IS45S16160G-7CTLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 458 | |
 | | IS45S16160G-7CTLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 18 | |
 | | IS45S16160G-7TLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 186 | |
 | | IS45S16160G-7TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 341 | |
 | | IS45S16160G-7TLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 652 | |
 | | IS45S16160G-7TLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 151 | |