IS45S16160G-7CTLA1

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 678 Available (as of May 4, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS45S16160G-7CTLA1 – IC DRAM 256Mbit Parallel 54-TSOP II

The IS45S16160G-7CTLA1 is a 256 Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface. Built on a fully synchronous pipeline architecture, it provides high-speed data transfer with signals referenced to the rising edge of the clock.

This device targets designs that require a compact, parallel SDRAM solution with programmable burst operation, selectable CAS latency, and industrial temperature operation. Key value propositions include predictable synchronous timing, flexible burst modes, and a compact 54-pin TSOP-II package for space-constrained board layouts.

Key Features

  • Memory Core 256 Mbit SDRAM organized as 16M × 16 with internal bank architecture to optimize row access and precharge operations.
  • Clock and Timing Supports a clock frequency up to 143 MHz (–7 speed grade) with access time from clock as low as 5.4 ns and programmable CAS latency (2 or 3 cycles).
  • Burst and Sequencing Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible data transfer patterns.
  • Refresh and Self-Maintenance Auto Refresh and Self Refresh capability with 8K refresh cycles; refresh timing options include 8K/64 ms (commercial/industrial/A1) and 8K/32 ms (A2).
  • Interface LVTTL-compatible I/O with a parallel memory interface for straightforward integration into parallel SDRAM memory subsystems.
  • Power Single power supply range of 3.0 V to 3.6 V, matching common 3.3 V system rails.
  • Package and Mounting Available in a 54-pin TSOP-II (0.400", 10.16 mm width) package, suitable for surface-mount assembly in compact board designs.
  • Operating Temperature Industrial operating range from –40 °C to +85 °C (TA) for use in temperature-demanding environments.

Typical Applications

  • Parallel memory subsystems — Provides a 256 Mbit synchronous DRAM option for designs requiring parallel SDRAM with programmable burst modes.
  • High-speed buffering — Used where predictable synchronous timing and burst transfers are required for data buffering and pipelined transfers.
  • Embedded systems with industrial temperature requirements — Suitable for boards and modules that must operate from –40 °C to +85 °C.

Unique Advantages

  • Compact, industry-standard packaging: 54-pin TSOP-II (10.16 mm width) delivers a small footprint for space-limited PCBs.
  • Flexible timing and burst options: Programmable CAS latency, burst lengths and sequences allow tuning of performance to match system timing and throughput needs.
  • Synchronous pipeline architecture: All signals referenced to clock edge for predictable latency and streamlined timing closure in synchronous designs.
  • Industrial temperature capability: Rated for –40 °C to +85 °C to support applications in temperature-challenged environments.
  • Single 3.0–3.6 V supply: Compatible with standard 3.3 V system rails for straightforward power integration.

Why Choose IS45S16160G-7CTLA1?

The IS45S16160G-7CTLA1 delivers a compact, industrial-grade 256 Mbit SDRAM solution with synchronous pipeline architecture and flexible burst/latency programming. Its combination of a 16M × 16 organization, LVTTL-compatible parallel interface, and a 3.0–3.6 V supply makes it suitable for designs that need predictable timing and modular memory configuration.

This device is well suited to engineers and system designers seeking a reliable parallel SDRAM option that balances density, timing flexibility, and a small TSOP-II footprint for constrained PCB layouts. The built-in refresh modes and selectable timing parameters support long-term system stability and adaptable memory performance.

Request a quote or submit an inquiry for IS45S16160G-7CTLA1 to discuss pricing, availability, and integration support for your specific design requirements.

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