IS45S16160G-7CTLA1
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 678 Available (as of May 4, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS45S16160G-7CTLA1 – IC DRAM 256Mbit Parallel 54-TSOP II
The IS45S16160G-7CTLA1 is a 256 Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface. Built on a fully synchronous pipeline architecture, it provides high-speed data transfer with signals referenced to the rising edge of the clock.
This device targets designs that require a compact, parallel SDRAM solution with programmable burst operation, selectable CAS latency, and industrial temperature operation. Key value propositions include predictable synchronous timing, flexible burst modes, and a compact 54-pin TSOP-II package for space-constrained board layouts.
Key Features
- Memory Core 256 Mbit SDRAM organized as 16M × 16 with internal bank architecture to optimize row access and precharge operations.
- Clock and Timing Supports a clock frequency up to 143 MHz (–7 speed grade) with access time from clock as low as 5.4 ns and programmable CAS latency (2 or 3 cycles).
- Burst and Sequencing Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible data transfer patterns.
- Refresh and Self-Maintenance Auto Refresh and Self Refresh capability with 8K refresh cycles; refresh timing options include 8K/64 ms (commercial/industrial/A1) and 8K/32 ms (A2).
- Interface LVTTL-compatible I/O with a parallel memory interface for straightforward integration into parallel SDRAM memory subsystems.
- Power Single power supply range of 3.0 V to 3.6 V, matching common 3.3 V system rails.
- Package and Mounting Available in a 54-pin TSOP-II (0.400", 10.16 mm width) package, suitable for surface-mount assembly in compact board designs.
- Operating Temperature Industrial operating range from –40 °C to +85 °C (TA) for use in temperature-demanding environments.
Typical Applications
- Parallel memory subsystems — Provides a 256 Mbit synchronous DRAM option for designs requiring parallel SDRAM with programmable burst modes.
- High-speed buffering — Used where predictable synchronous timing and burst transfers are required for data buffering and pipelined transfers.
- Embedded systems with industrial temperature requirements — Suitable for boards and modules that must operate from –40 °C to +85 °C.
Unique Advantages
- Compact, industry-standard packaging: 54-pin TSOP-II (10.16 mm width) delivers a small footprint for space-limited PCBs.
- Flexible timing and burst options: Programmable CAS latency, burst lengths and sequences allow tuning of performance to match system timing and throughput needs.
- Synchronous pipeline architecture: All signals referenced to clock edge for predictable latency and streamlined timing closure in synchronous designs.
- Industrial temperature capability: Rated for –40 °C to +85 °C to support applications in temperature-challenged environments.
- Single 3.0–3.6 V supply: Compatible with standard 3.3 V system rails for straightforward power integration.
Why Choose IS45S16160G-7CTLA1?
The IS45S16160G-7CTLA1 delivers a compact, industrial-grade 256 Mbit SDRAM solution with synchronous pipeline architecture and flexible burst/latency programming. Its combination of a 16M × 16 organization, LVTTL-compatible parallel interface, and a 3.0–3.6 V supply makes it suitable for designs that need predictable timing and modular memory configuration.
This device is well suited to engineers and system designers seeking a reliable parallel SDRAM option that balances density, timing flexibility, and a small TSOP-II footprint for constrained PCB layouts. The built-in refresh modes and selectable timing parameters support long-term system stability and adaptable memory performance.
Request a quote or submit an inquiry for IS45S16160G-7CTLA1 to discuss pricing, availability, and integration support for your specific design requirements.