IS45S16160G-7CTLA2

The IS45S16160G-7CTLA2 is a 256 Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface and a 54‑pin TSOP II package. It implements a fully synchronous pipeline architecture with internal bank management to support high‑speed data transfer and predictable timing behavior.

Targeted for designs requiring parallel SDRAM memory with programmable burst operation and selectable CAS latency, this device delivers deterministic access timing across a wide operating temperature range and a 3.0 V–3.6 V supply window.

Key Features

• Core / Architecture  Fully synchronous SDRAM with internal bank architecture for row access/precharge hiding and predictable, clock‑referenced operation.
• Memory Organization  256 Mbit capacity arranged as 16M × 16 with four internal banks.
• Performance  -7 speed grade supports a clock frequency up to 143 MHz and access times of 5.4 ns (CAS latency options apply).
• Programmable Burst and CAS  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (sequential/interleave), with selectable CAS latency of 2 or 3 clocks.
• Refresh and Low‑Power Modes  Auto Refresh (CBR) and Self Refresh support; 8K refresh cycles per specified interval per device grade.
• Interface and I/O  LVTTL compatible interface with synchronous, edge‑referenced signaling and support for random column address every clock cycle.
• Power  Single power supply operation across 3.0 V to 3.6 V.
• Package and Temperature  54‑pin TSOP II (0.400", 10.16 mm width) package; specified operating temperature range from −40°C to +105°C (TA).

Typical Applications

• Parallel memory subsystems  Acts as system memory or buffer where a parallel SDRAM interface and 16‑bit data path are required.
• Embedded and industrial equipment  Suitable for designs that need synchronous DRAM with wide operating temperature support and programmable timing.
• High‑throughput buffering  Used for burst read/write buffering in systems that leverage programmable burst lengths and internal bank management.

Unique Advantages

• Deterministic synchronous timing  All signals referenced to the positive clock edge for predictable timing and easy integration into clocked systems.
• Flexible burst and latency control  Programmable burst lengths, burst sequences, and CAS latency options enable tuning for different access patterns and system timing.
• High‑speed operation  -7 speed grade supports up to 143 MHz operation with 5.4 ns access times for responsive data transfers.
• Robust refresh and power modes  Auto and self refresh support with defined refresh cycles to maintain data integrity while managing power.
• Compact package  54‑pin TSOP II footprint provides a space‑efficient mounting option for board designs requiring parallel SDRAM.
• Wide supply tolerance  Operates across a 3.0 V–3.6 V supply range to accommodate common 3.3 V system rails.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS45S16160G-7CTLA2 positions itself as a solid choice for systems requiring a 16‑bit parallel SDRAM with programmable burst behavior, selectable CAS latency, and predictable synchronous timing. Its combination of 256 Mbit capacity, internal bank architecture, and up to 143 MHz clocking supports applications that need responsive burst reads/writes and deterministic memory access.

This device is well suited for engineers specifying parallel SDRAM in embedded or industrial designs that demand a compact TSOP II package, defined refresh behavior, and a 3.0 V–3.6 V power envelope. The feature set enables straightforward integration into clocked memory subsystems while allowing timing and burst configuration to match application requirements.

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