IS45S16160G-7TLA1-TR

The IS45S16160G-7TLA1-TR is a 256 Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel interface and pipeline architecture. All input and output signals are referenced to the rising edge of the clock for fully synchronous operation.

This device supports high-speed operation with timing for the –7 grade (143 MHz clock, 5.4 ns access from clock), programmable CAS latency, LVTTL signaling, a single 3.3 V ±0.3 V supply (3.0–3.6 V), and is available in a 54-pin TSOP-II package with an operating temperature range of –40°C to +85°C (TA).

Key Features

• Memory Core  256 Mbit SDRAM organized as 16M × 16 with internal bank architecture to hide row access and precharge operations.
• Performance  Timing options include support for –7 timing (143 MHz) with 5.4 ns access from clock; programmable CAS latency (2 or 3 clocks) to balance latency and throughput.
• Burst and Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave); supports burst read/write and burst read/single write operations with burst termination options.
• Refresh and Power Management  Auto Refresh (CBR) and Self Refresh supported; refresh counts: 8K cycles per 32 ms (A2 grade) or 64 ms (commercial/industrial/A1 grades).
• Interface  Parallel memory interface with LVTTL signaling and the ability for random column address every clock cycle.
• Power  Single 3.3 V ±0.3 V power supply (3.0–3.6 V).
• Package and Temperature  54-pin TSOP-II (0.400", 10.16 mm width) package; operating temperature range –40°C to +85°C (TA).

Typical Applications

• Embedded memory subsystems  Provides a 256 Mbit parallel SDRAM option where mid-density, synchronous DRAM is required for system memory.
• Industrial equipment  Supported operating range to –40°C to +85°C suits industrial-temperature designs requiring reliable SDRAM operation.
• High-speed buffering  Programmable burst lengths, selectable burst sequence and low access time enable efficient burst read/write buffering in high-throughput designs.

Unique Advantages

• Flexible burst control:  Programmable burst length and sequence allow designers to optimize transfers for sequential or interleaved access patterns.
• Configurable latency:  Selectable CAS latency (2 or 3 clocks) provides trade-offs between access latency and clock rate to match system timing requirements.
• Low-latency read access:  Access timing for the –7 grade delivers 5.4 ns access from clock to support time-sensitive data paths.
• Single-supply simplicity:  3.3 V ±0.3 V single power rail simplifies power design and integration.
• Industry-standard packaging:  54-pin TSOP-II footprint enables straightforward board-level integration into existing layouts.
• Documented refresh options:  Multiple refresh modes and documented refresh counts support a range of system refresh strategies.

Why Choose IS45S16160G-7TLA1-TR?

The IS45S16160G-7TLA1-TR provides a documented, synchronous 256 Mbit memory solution with configurable latency and burst behavior, a single 3.3 V supply, and robust timing characteristics (5.4 ns access for –7 timing). Its 54-pin TSOP-II package and industrial temperature rating make it suitable for designs requiring a mid-density parallel SDRAM with predictable timing and refresh behavior.

This device is appropriate for engineers specifying SDRAM where selectable burst modes, CAS latency options, and documented refresh and timing parameters are required for system-level memory performance and integration.

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