IS45S16160J-6BLA1-TR

IC DRAM 256MBIT PAR 54TFBGA
Part Description

IC DRAM 256MBIT PAR 54TFBGA

Quantity 1,067 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time12 Weeks
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS45S16160J-6BLA1-TR – 256 Mbit Parallel SDRAM, 54‑TFBGA

The IS45S16160J-6BLA1-TR is a 256 Mbit volatile DRAM organized as 16M × 16 using SDRAM technology. It provides a parallel memory interface designed for systems requiring mid-density DRAM with defined timing and electrical characteristics.

Key specifications include a 166 MHz clock frequency, 5.4 ns access time, a supply voltage range of 3.0 V to 3.6 V, and a compact 54‑TFBGA (8×8) package. The device is specified for operation from −40°C to 85°C (TA).

Key Features

  • Memory Type & Organization 256 Mbit SDRAM organized as 16M × 16 provides parallel DRAM storage suitable for system memory expansion and buffering.
  • Performance Rated for a 166 MHz clock frequency with an access time of 5.4 ns to support time-sensitive read/write operations.
  • Interface Parallel memory interface for integration into designs that require standard DRAM signaling and timing.
  • Power Operates from 3.0 V to 3.6 V, providing compatibility with 3 V-class power rails.
  • Package 54‑TFBGA (8×8) supplier device package for compact board footprint and BGA mounting.
  • Temperature Range Specified operation from −40°C to 85°C (TA) for use across a broad ambient temperature range.

Unique Advantages

  • Mid-density memory option: 256 Mbit capacity balances storage and board space for systems needing moderate DRAM density.
  • Deterministic timing: 5.4 ns access time and 166 MHz clock rating enable predictable memory performance for timing-sensitive designs.
  • Standard parallel interface: Parallel SDRAM interface eases integration into existing DRAM controller architectures.
  • Wide supply window: 3.0 V to 3.6 V operation supports common 3 V power domains.
  • Compact BGA package: 54‑TFBGA (8×8) package minimizes PCB footprint while providing robust soldered connections.
  • Extended ambient operation: −40°C to 85°C rating supports deployment in a range of environmental conditions.

Why Choose IS45S16160J-6BLA1-TR?

The IS45S16160J-6BLA1-TR positions itself as a practical SDRAM choice for designs requiring a 256 Mbit parallel memory with defined access timing and a compact BGA footprint. Its combination of 16M × 16 organization, 166 MHz clock support, and 5.4 ns access time offers predictable performance for buffering and system memory tasks.

With a 3.0 V–3.6 V supply range and −40°C to 85°C operating window, this device is suitable for a variety of electronic applications where mid-density volatile memory and a small package are required.

Request a quote or submit an inquiry to discuss availability, lead times, and pricing for the IS45S16160J-6BLA1-TR.

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