IS45S16160J-7BLA1

IC DRAM 256MBIT PAR 54TFBGA
Part Description

IC DRAM 256MBIT PAR 54TFBGA

Quantity 604 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time12 Weeks
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS45S16160J-7BLA1 – IC DRAM 256Mbit PAR 54TFBGA

The IS45S16160J-7BLA1 is a 256 Mbit volatile DRAM device implemented in SDRAM technology with a parallel memory interface. It is organized as 16M x 16 and is designed for systems that require on-board parallel SDRAM memory with defined performance and environmental operating ranges.

Key attributes include a 143 MHz clock frequency, 5.4 ns access time, a 3.0 V to 3.6 V supply range, and an industrial operating temperature range of -40°C to 85°C (TA).

Key Features

  • Memory Type and Capacity 256 Mbit DRAM organized as 16M x 16, providing a parallel memory format for systems that require this organization.
  • Technology SDRAM technology with a parallel interface suitable for designs that utilize synchronous DRAM operation.
  • Performance Rated clock frequency of 143 MHz and an access time of 5.4 ns, delivering defined timing characteristics for system memory operations.
  • Voltage Supply voltage range from 3.0 V to 3.6 V, matching common 3 V-class system power rails.
  • Temperature Range Operating temperature range of -40°C to 85°C (TA) for deployment in environments within this range.
  • Package 54-TFBGA package (8x8) providing a compact BGA footprint for surface-mount assembly.
  • Manufacturer Integrated Silicon Solution Inc (ISSI) branded device, part number IS45S16160J-7BLA1.

Typical Applications

  • Embedded Systems Use as parallel SDRAM memory where 256 Mbit capacity and 16M x 16 organization are required for system memory.
  • Consumer Electronics Integration into devices that require synchronous parallel DRAM with specified clock and access timing.
  • Industrial Equipment Suitable for equipment operating within -40°C to 85°C that needs a 3.0 V–3.6 V SDRAM memory solution.

Unique Advantages

  • Defined SDRAM Performance: 143 MHz clock rating and 5.4 ns access time provide clear timing parameters for system designers.
  • Compact BGA Package: 54-TFBGA (8x8) package minimizes board area while supporting BGA assembly processes.
  • Standard Parallel Interface: Parallel memory interface and 16M x 16 organization align with designs that utilize parallel SDRAM modules.
  • Wide Supply Range: Operates across a 3.0 V to 3.6 V range to accommodate common 3 V-class power domains.
  • Extended Temperature Support: -40°C to 85°C operating range supports deployments across a broad set of environmental conditions.

Why Choose IS45S16160J-7BLA1?

The IS45S16160J-7BLA1 provides a clear, specification-driven SDRAM option for designs needing 256 Mbit capacity in a 16M x 16 organization. With defined clock and access timing, a 3.0 V–3.6 V supply range, and an industrial temperature rating, it suits projects that require verifiable electrical and environmental characteristics.

This device is appropriate for engineers and procurement teams specifying parallel SDRAM memory in compact BGA form factors, offering predictable integration into systems that rely on synchronous DRAM behavior and the stated electrical and thermal limits.

Request a quote or contact sales for pricing, availability, and lead-time information for the IS45S16160J-7BLA1.

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