IS45S16160J-7BLA2-TR

IC DRAM 256MBIT PAR 54TFBGA
Part Description

IC DRAM 256MBIT PAR 54TFBGA

Quantity 1,073 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time12 Weeks
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS45S16160J-7BLA2-TR – IC DRAM 256MBIT PAR 54TFBGA

The IS45S16160J-7BLA2-TR is a 256 Mbit volatile SDRAM device organized as 16M × 16 with a parallel memory interface. It provides synchronous DRAM storage with defined timing and electrical characteristics for designs that require fast parallel memory access.

Key attributes include a 143 MHz clock rate, 5.4 ns access time, a 3.0 V to 3.6 V supply range, and an extended operating temperature range of −40°C to 105°C, offered in a compact 54‑TFBGA (8×8) package.

Key Features

  • Memory 256 Mbit SDRAM organized as 16M × 16, providing parallel DRAM storage for system working memory and buffering.
  • Performance Specified for operation at a 143 MHz clock frequency with a 5.4 ns access time for synchronous parallel access patterns.
  • Interface Parallel memory interface suitable for system designs that require synchronous DRAM connectivity.
  • Power Operates from a 3.0 V to 3.6 V supply range, matching standard 3V supply domains.
  • Package Supplied in a 54‑TFBGA (8×8) package for compact board-level integration.
  • Operating Temperature Rated for −40°C to 105°C (TA), supporting extended-temperature applications.
  • Memory Format & Mounting Volatile DRAM device; surface-mount TFBGA package for PCB assembly.

Typical Applications

  • Systems requiring parallel SDRAM storage — Designs that need 256 Mbit of volatile SDRAM with 16M × 16 organization and parallel interface for working memory or buffering.
  • Embedded and industrial electronics — Where extended operating temperature (−40°C to 105°C) and a compact 54‑TFBGA footprint are required.
  • High-speed buffering — Use in applications that benefit from a 143 MHz clock rate and 5.4 ns access time for synchronous data transfers.

Unique Advantages

  • Precise performance specification: Defined 143 MHz clock frequency and 5.4 ns access time enable predictable timing behavior in synchronous systems.
  • Compact BGA footprint: 54‑TFBGA (8×8) package minimizes board area while supporting surface-mount assembly.
  • Wide supply tolerance: 3.0 V to 3.6 V supply range fits common 3V system power rails.
  • Extended temperature rating: −40°C to 105°C operating range supports deployment in temperature-challenging environments.
  • Parallel memory organization: 16M × 16 arrangement simplifies integration into parallel SDRAM memory buses.

Why Choose IS45S16160J-7BLA2-TR?

IS45S16160J-7BLA2-TR positions itself as a straightforward 256 Mbit SDRAM option for designs that require defined synchronous performance, a parallel interface, and a compact BGA package. Its specified clocking and access characteristics, combined with a 3.0–3.6 V supply range and extended temperature rating, make it suited to systems that demand predictable memory timing and robust operating range.

This device is appropriate for engineers and procurement teams selecting external DRAM for embedded, industrial, or other applications where a 16M × 16 SDRAM in a 54‑TFBGA form factor meets system requirements for capacity, timing, and environmental tolerance.

If you require pricing or availability information, request a quote or submit a quote request to obtain further procurement details and lead-time estimates.

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