IS45S16160J-6TLA1 -TR

The IS45S16160J-6TLA1 -TR from ISSI (Integrated Silicon Solution Inc) is a 256 Mbit parallel SDRAM device organized as 16M × 16. It implements standard SDRAM architecture to provide volatile, high-speed memory for systems that require parallel DRAM storage.

Designed for performance and board-level integration, this device offers a 166 MHz clock frequency with a 5.4 ns access time, a 3.0–3.6 V supply range, and a 54‑lead TSOP II package (0.400", 10.16 mm width), covering an operating ambient range of -40 °C to 85 °C.

Key Features

• Memory Core 256 Mbit SDRAM organized as 16M × 16, providing a wide 16-bit data path for parallel memory interfaces.
• Performance Supports a clock frequency of 166 MHz and an access time of 5.4 ns to meet fast memory access requirements.
• Interface Parallel DRAM interface for direct system memory and buffer implementations.
• Power Operates from a 3.0 V to 3.6 V supply range, enabling compatibility with 3 V-class power rails.
• Package Supplied in a 54‑TSOP II (0.400", 10.16 mm width) package suitable for surface-mount board designs.
• Temperature Range Rated for operation from -40 °C to 85 °C (TA), supporting applications with extended ambient temperature requirements.

Typical Applications

• System Memory Serves as parallel SDRAM for digital subsystems requiring a 16-bit wide memory interface and 256 Mbit capacity.
• Frame Buffer Suitable for use as frame or line buffer memory where fast random access and wide data paths are needed.
• Data Buffering Used for temporary storage and data buffering in communication and processing subsystems with parallel interfaces.
• Embedded DRAM Provides general-purpose volatile memory for embedded designs that require a standard SDRAM interface and TSOP II packaging.

Unique Advantages

• Wide 16‑bit Organization: The 16M × 16 configuration enables a broad data bus width for efficient parallel transfers and simplified bus mapping.
• High-Frequency Operation: A 166 MHz clock rating supports high-throughput memory operations tied to the SDRAM architecture.
• Low Access Latency: 5.4 ns access time reduces wait states for time-sensitive read operations.
• Standard Surface-Mount Package: 54‑TSOP II packaging provides a compact, manufacturable footprint for dense PCB layouts.
• Flexible Power Range: 3.0–3.6 V supply compatibility eases integration with common 3 V-class power systems.
• Extended Operating Temperature: Rated from -40 °C to 85 °C for applications that require broader ambient temperature tolerance.

Why Choose IS45S16160J-6TLA1 -TR?

The IS45S16160J-6TLA1 -TR is positioned as a straightforward, high-performance parallel SDRAM component offering a 256 Mbit capacity in a 16M × 16 organization. Its combination of 166 MHz clock operation, 5.4 ns access time, and standard 54‑TSOP II packaging makes it a practical choice for designs that require reliable, board-level volatile memory with a wide data path.

With a 3.0–3.6 V supply range and an operating ambient of -40 °C to 85 °C, this device is suitable for designs demanding compatibility with 3 V power rails and extended temperature operation, providing predictable electrical and physical characteristics for system designers and procurement teams.

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