IS45S16160J-7BLA1-TR

IC DRAM 256MBIT PAR 54TFBGA
Part Description

IC DRAM 256MBIT PAR 54TFBGA

Quantity 1,950 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time12 Weeks
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS45S16160J-7BLA1-TR – 256 Mbit SDRAM, 54-TFBGA

The IS45S16160J-7BLA1-TR is a 256 Mbit volatile SDRAM organized as 16M × 16 with a parallel memory interface. It provides synchronous DRAM operation with a specified clock frequency of 143 MHz and an access time of 5.4 ns.

Targeted for designs that require external parallel SDRAM, the device offers a standard 54‑TFBGA (8×8) package and supports an operating ambient temperature range of −40°C to 85°C with a supply voltage range of 3.0 V to 3.6 V.

Key Features

  • Memory Type and Organization 256 Mbit SDRAM organized as 16M × 16 for parallel memory implementations.
  • Performance Synchronous operation with a clock frequency rating of 143 MHz and an access time of 5.4 ns to support predictable memory timing.
  • Voltage and Power Operates from a 3.0 V to 3.6 V supply range, matching common 3 V SDRAM power domains.
  • Interface Parallel memory interface suitable for systems designed around parallel DRAM connectivity.
  • Package 54‑TFBGA (8×8) supplier device package for surface-mount assembly.
  • Temperature Range Rated for operation over an ambient temperature range of −40°C to 85°C (TA).
  • Memory Format Volatile DRAM suitable for external system memory and buffering applications.

Typical Applications

  • Embedded memory expansion — Provides 256 Mbit of parallel SDRAM (16M × 16) for systems requiring external volatile storage with synchronous timing.
  • Buffering and frame storage — Used where parallel DRAM is required for temporary data buffering at the device's specified clock and access timings.
  • System memory for controllers — Fits applications that integrate external parallel SDRAM to extend working memory while operating within the specified voltage and temperature ranges.

Unique Advantages

  • Deterministic timing: The specified 143 MHz clock frequency and 5.4 ns access time enable consistent memory timing for system design and timing closure.
  • Standard parallel interface: The parallel DRAM format and 16M × 16 organization simplify integration into designs that use parallel memory buses.
  • Wide operating temperature: −40°C to 85°C ambient rating supports deployment in a range of environmental conditions.
  • Common 3 V supply domain: 3.0 V to 3.6 V supply compatibility aligns with typical 3 V system power rails.
  • Compact BGA package: 54‑TFBGA (8×8) package supports surface-mount assembly and dense board layouts.

Why Choose IC DRAM 256MBIT PAR 54TFBGA?

The IS45S16160J-7BLA1-TR delivers a compact 256 Mbit SDRAM solution with defined synchronous performance (143 MHz clock, 5.4 ns access) and a parallel interface suited to designs that require external volatile memory. Its supply voltage range of 3.0 V to 3.6 V and −40°C to 85°C ambient rating make it applicable across a variety of system conditions.

This device is appropriate for engineers and procurement teams specifying parallel SDRAM for embedded systems, buffering, or controller memory where clear electrical, timing, and package parameters are required for reliable integration and assembly.

Request a quote or submit an inquiry to obtain pricing and availability for the IS45S16160J-7BLA1-TR.

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