IS45S16160G-7TLA2

The IS45S16160G-7TLA2 is a 256 Mbit synchronous DRAM (SDRAM) device organized as 16M × 16 with a parallel memory interface. It uses a pipeline architecture and fully synchronous signaling referenced to a positive clock edge for high-speed data transfer in systems that require deterministic SDRAM behavior.

Designed for systems operating from a single 3.3 V supply (3.0 V to 3.6 V), the device offers programmable burst modes, selectable CAS latency, internal bank architecture for hidden row access/precharge, and support for Auto Refresh and Self Refresh modes. The device is available in a 54-pin TSOP II package with a 10.16 mm width.

Key Features

• Memory Core  256 Mbit SDRAM organized as 16M × 16 with internal bank architecture to improve effective access performance.
• Performance  Clock frequency support up to 143 MHz for the -7 speed grade; access time from clock as low as 5.4 ns (CL = 3).
• Programmable Burst & Latency  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (Sequential/Interleave); CAS latency programmable between 2 and 3 clocks.
• Refresh and Power Management  Supports Auto Refresh (CBR) and Self Refresh; 8K refresh cycles per refresh period as specified for commercial and grade options.
• Interface  LVTTL-compatible signals with a parallel memory interface for systems using standard SDRAM control timing.
• Supply Voltage  Single power supply operation from 3.0 V to 3.6 V (nominal 3.3 V ±0.3 V).
• Package & Mounting  54-pin TSOP II package (0.400" / 10.16 mm width) for surface-mount applications.
• Operating Temperature  Rated for operation from −40°C to +105°C (TA) depending on device grade.

Typical Applications

• Synchronous system memory  Use as main SDRAM in systems that require pipeline synchronous DRAM with programmable burst and latency options.
• High-speed data buffering  Buffering and temporary storage where deterministic, clock-referenced transfers and low access times (5.4 ns from clock) are required.
• Parallel-interface designs  Integration into legacy or contemporary designs using a parallel LVTTL SDRAM interface and standard SDRAM control signals.
• Wide-temperature deployments  Applications requiring extended ambient temperature capability (specified down to −40°C and up to +105°C TA for applicable grades).

Unique Advantages

• Flexible performance scaling:  Programmable burst lengths and CAS latencies let designers balance throughput and latency for target workloads.
• Predictable low-latency access:  Access times from clock as low as 5.4 ns (CL = 3) at the -7 speed grade provide predictable read timing for real-time data paths.
• Single-supply simplicity:  Operates from a single 3.0 V–3.6 V supply, simplifying power-supply design and integration.
• Internal bank architecture:  Built-in bank management hides row access/precharge latency to improve effective throughput on burst operations.
• Standard package footprint:  54-pin TSOP II (10.16 mm width) supports common board-level mounting and form-factor constraints.
• Comprehensive refresh modes:  Auto Refresh and Self Refresh support with specified refresh cycles for continuous data integrity management.

Why Choose IS45S16160G-7TLA2?

The IS45S16160G-7TLA2 delivers a well-specified synchronous DRAM solution for designs that need 256 Mbit of parallel SDRAM capacity with programmable burst behavior and selectable CAS latency. Its pipeline architecture, internal bank management, and low access times enable predictable high-speed data transfers in systems that rely on clocked memory operations.

This device is appropriate for engineers and procurement teams specifying SDRAM for projects that require a 3.3 V single-supply memory, a 54-pin TSOP II package, and operation across a wide ambient temperature range. The combination of programmable performance options, standard interface levels, and refresh management supports long-term design stability and integration into established SDRAM architectures.

If you would like pricing, lead-time information, or a formal quote for the IS45S16160G-7TLA2, please submit a request or inquiry and our team will respond with details.