IS45S16160G-7BLA2

The IS45S16160G-7BLA2 is a 256Mbit synchronous DRAM (SDRAM) organized as 16M x 16 with a parallel interface and pipeline architecture. It provides fully synchronous operation referenced to the rising edge of the clock and is optimized for high‑speed data transfer and burst access.

Designed for use where volatile high‑speed memory is required, the device combines programmable burst modes, selectable CAS latency and built‑in refresh management to support systems that need predictable, low‑latency DRAM access within a compact 54‑TFBGA package.

Key Features

• Memory Core: 256 Mbit SDRAM organized as 16M × 16 with internal bank architecture for hiding row access and precharge.
• Performance: Clock frequency support up to 143 MHz for the -7 device variant and access time down to 5.4 ns.
• Programmable Timing and Burst: Programmable burst length (1, 2, 4, 8, full page), sequential/interleave burst sequence, and selectable CAS latency (2 or 3 clocks) to tune throughput and latency.
• Refresh and Reliability: Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles with 32 ms or 64 ms refresh options depending on device grade.
• Interface and Logic Levels: Fully synchronous LVTTL interface with all signals referenced to the positive clock edge for deterministic timing.
• Power: Single power supply operation at 3.3 V ± 0.3 V (3.0 V to 3.6 V specified).
• Package and Temperature: 54‑ball TFBGA (8 × 8) package; operating temperature range specified as −40 °C to +105 °C (TA).

Typical Applications

• High‑speed buffering and system memory: Temporary storage and burst access where synchronous DRAM is required for predictable, pipelined transfers.
• Memory subsystems with programmable timing: Designs that benefit from selectable CAS latency and burst configurations to match different access patterns.
• Temperature‑variant environments: Systems requiring operation across −40 °C to +105 °C where a compact BGA memory solution is needed.
• Low‑latency data transfers: Applications that require access times around 5.4 ns and support for randomized column access every clock cycle.

Unique Advantages

• Configurable performance: Programmable CAS latency and burst length allow designers to optimize throughput and latency for target workloads.
• Deterministic synchronous interface: All inputs and outputs referenced to the rising edge of the clock simplify timing analysis and system integration.
• Compact BGA footprint: 54‑TFBGA (8×8) package provides a space‑efficient mounting option for dense PCB layouts.
• Built‑in refresh management: Auto and self refresh modes with defined 8K refresh cycles reduce external refresh handling and support robust data retention during idle periods.
• Single‑supply operation: 3.0 V to 3.6 V supply range matches common 3.3 V system rails for straightforward power integration.

Why Choose IC DRAM 256MBIT PAR 54TFBGA?

The IS45S16160G-7BLA2 delivers a compact, fully synchronous 256 Mbit SDRAM solution with flexible timing, burst options and built‑in refresh features that support predictable, low‑latency memory access. Its 16M × 16 organization, pipeline architecture and LVTTL interface make it suitable for designs that need configurable performance within a small 54‑TFBGA footprint.

This device is well suited to engineers and procurement teams seeking a volatile high‑speed memory component with defined electrical and timing characteristics (3.0–3.6 V supply, 143 MHz clock for the -7 variant, and −40 °C to +105 °C operating range) to support stable, long‑term system integration.

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