IS45S16160G-7BLA1

The IS45S16160G-7BLA1 is a 256Mbit synchronous DRAM device from Integrated Silicon Solution Inc (ISSI) organized as 16M × 16 with a parallel memory interface. It implements a fully synchronous pipeline architecture and LVTTL-compatible signaling to support high-speed data transfer and burst-oriented memory access.

This device addresses designs requiring a 256Mbit parallel SDRAM with programmable burst length and sequence, selectable CAS latency, and on-chip refresh options, delivered in a compact 54-ball TFBGA package and operating over a -40°C to +85°C ambient range.

Key Features

• Memory Organization  256 Mbit capacity organized as 16M × 16 with internal bank architecture for row access/precharge management.
• Performance  Speed grade -7 supports a clock frequency up to 143 MHz with an access time from clock of 5.4 ns and programmable CAS latency (2 or 3 clocks).
• Burst and Sequencing  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible data transfer patterns.
• Refresh and Power Management  Supports Auto Refresh and Self Refresh; refresh options include 8K refresh cycles every 32 ms (A2 grade) or 64 ms (commercial/industrial/A1 grade).
• Supply and Interface  Single-supply operation at 3.0 V to 3.6 V (nominal 3.3 V ±0.3 V) with LVTTL-compatible inputs and a parallel memory interface.
• Package and Temperature Range  54-ball TFBGA (8 × 8) package; specified operating ambient temperature from -40°C to +85°C (TA).

Typical Applications

• Embedded Systems  Use as high-performance parallel SDRAM in embedded platforms that require deterministic, synchronous memory access at up to 143 MHz.
• Buffer and Frame Memory  Suited for data buffering or frame buffering where 16M × 16 organization and programmable burst transfers improve throughput.
• Industrial Electronics  Applicable in industrial designs that need operation across a -40°C to +85°C ambient range and a 3.3 V single-supply memory solution.

Unique Advantages

• Deterministic synchronous operation  Fully synchronous design with all signals referenced to the positive clock edge simplifies timing analysis and system integration.
• Flexible performance tuning  Programmable CAS latency and burst options let designers balance latency, throughput, and access patterns for target workloads.
• Single 3.3 V supply  Operates from 3.0 V to 3.6 V, minimizing the need for additional power rails and simplifying power supply design.
• Compact BGA package  54-ball TFBGA (8×8) reduces PCB area compared to larger packages while providing standard parallel SDRAM pinout.
• On-chip refresh management  Auto Refresh and Self Refresh modes with supported refresh intervals reduce external controller overhead for memory retention.

Why Choose IC DRAM 256MBIT PAR 54TFBGA?

The IS45S16160G-7BLA1 positions itself as a straightforward, standards-based 256Mbit parallel SDRAM option for designs that require synchronous, burst-capable memory with configurable timing. Its 16M × 16 organization, programmable burst modes, and selectable CAS latency enable designers to adapt memory behavior to application-specific performance needs.

With single-supply 3.3 V operation, a compact 54-ball TFBGA footprint, and support for industrial ambient temperatures, this device is suitable for teams seeking a reliable memory building block from ISSI when deterministic synchronous DRAM behavior and on-chip refresh features are required.

Request a quote or submit a pricing inquiry to obtain part availability and lead-time information for the IS45S16160G-7BLA1.