IS45S16160G-6CTLA1

The IS45S16160G-6CTLA1 is a 256 Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with an internal 4-bank architecture. It is a fully synchronous, volatile memory device optimized for pipeline operation and high-speed data transfer in systems that require parallel SDRAM.

This device provides programmable burst operation, selectable CAS latency, and built-in refresh modes, making it suitable for memory subsystems where predictable timing, density and standard SDRAM interfacing are required.

Key Features

• Core / Architecture  Fully synchronous SDRAM with internal bank architecture (4 banks) and all signals referenced to the rising edge of the clock for pipeline operation.
• Memory Organization & Capacity  256 Mbit total capacity organized as 16M × 16 with 4 banks (4M × 16 × 4 banks).
• Performance  –6 speed grade operation at 166 MHz clock frequency with an access time from clock of 5.4 ns (CAS latency support for 2 or 3 clocks).
• Burst and Timing  Programmable burst length (1, 2, 4, 8, full page) and programmable burst sequence (Sequential/Interleave). Burst read/write and burst read/single write supported with burst termination options.
• Refresh and Reliability  Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles with 32 ms or 64 ms refresh intervals depending on grade.
• Interface  LVTTL-compatible interface with random column address capability every clock cycle.
• Power  Single power supply: 3.3 V ±0.3 V (noted as 3.0 V to 3.6 V in product specifications).
• Package & Temperature  54-pin TSOP-II package (0.400", 10.16 mm width) and specified operating temperature range of –40°C to +85°C (TA) for the listed part.

Typical Applications

• Memory expansion for embedded systems  Provides 256 Mbit of synchronous parallel DRAM capacity for designs requiring standard SDRAM interfacing and predictable timing.
• High-speed data buffering  Pipeline operation, programmable burst lengths and 166 MHz operation enable use as a high-speed buffer in data-path applications.
• Standard SDRAM subsystems  Suitable for systems that implement parallel SDRAM memory banks with LVTTL signaling and standard refresh management.

Unique Advantages

• 256 Mbit density in a compact TSOP-II package: Delivers substantial memory capacity (16M × 16 organization) in a 54-pin TSOP-II footprint for space-constrained designs.
• Programmable timing and burst control: CAS latency selectable (2 or 3 clocks) and flexible burst length/sequence allow tuning for system timing and throughput requirements.
• Built-in refresh management: Auto Refresh and Self Refresh modes with 8K refresh cycle support simplify refresh handling across commercial and industrial grades.
• Synchronous pipeline architecture: All signals referenced to the rising clock edge and random column access every clock cycle support deterministic timing for system integration.
• Wide operating voltage window: Single-supply operation across 3.0 V–3.6 V (3.3 V ±0.3 V) supports standard 3.3 V system rails.
• Industrial temperature support: Specified operation from –40°C to +85°C (TA) for this part number addresses harsher ambient conditions.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS45S16160G-6CTLA1 provides a straightforward, synchronous parallel DRAM option when 256 Mbit density, predictable timing and standard SDRAM features are required. With programmable burst operation, selectable CAS latency and built-in refresh modes, it integrates into systems that need deterministic pipeline memory behavior.

This device is well suited to designers and procurement teams targeting established 3.3 V SDRAM interfaces in compact package footprints and applications that demand operation across a –40°C to +85°C temperature range. The combination of density, timing flexibility and standard LVTTL signaling supports efficient system integration and long-term maintainability.

For pricing, availability or to request a quote for IS45S16160G-6CTLA1, please submit a request to sales or specify your project requirements for a formal quotation.