IS45S16160D-7TLA1-TR

The IS45S16160D-7TLA1-TR is a 256 Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface. It uses a pipelined, fully synchronous architecture with internal bank management to support high-speed data transfer and predictable timing.

Designed for systems requiring parallel SDRAM with a 3.0–3.6 V supply and an extended operating range down to −40 °C, this device targets industrial and embedded memory subsystems that need programmable burst operation, refresh control and LVTTL signaling.

Key Features

• Memory Organization  256 Mbit SDRAM organized as 16M × 16 with internal bank architecture for concurrent row access and precharge.
• Performance  Clock frequency up to 143 MHz (device -7 timing); typical access time from clock of 5.4 ns for CAS latency = 3.
• Programmable Burst and Latency  Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave); CAS latency selectable (2 or 3 clocks).
• Refresh and Retention  Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles configurable for 16 ms (A2 grade) or 64 ms (commercial/industrial/A1 grade) options as specified.
• Interface and Signaling  LVTTL-compatible interface with synchronous, clock-referenced inputs and outputs for predictable timing.
• Power  Single power supply operation: 3.3 V ± 0.3 V (3.0–3.6 V).
• Package and Mounting  54-pin TSOP-II package (0.400", 10.16 mm width) suitable for standard surface-mount assembly.
• Operating Temperature  Specified operating temperature range: −40 °C to +85 °C (TA).

Typical Applications

• Embedded and industrial memory subsystems  Use as parallel SDRAM storage where 256 Mbit capacity and −40 °C to +85 °C operation are required.
• High-speed data buffering  Suitable for designs needing pipelined SDRAM buffering with programmable burst lengths and low access latency.
• System memory for legacy parallel interfaces  Fits platforms that use LVTTL synchronous parallel DRAM with CAS latency control and self-refresh capability.

Unique Advantages

• Predictable synchronous timing: Fully synchronous operation with all signals referenced to the rising clock edge simplifies timing analysis and system integration.
• Flexible burst control: Programmable burst length and sequence plus burst termination options enable efficient block transfers and memory access tuning.
• Configurable refresh modes: Auto and self refresh with selectable refresh interval support a range of system retention and power scenarios.
• Industrial temperature support: Rated to operate from −40 °C to +85 °C for robust use in temperature-challenging environments.
• Standard TSOP-II package: 54-pin TSOP-II footprint simplifies adoption in existing board designs requiring this package form factor.

Why Choose IS45S16160D-7TLA1-TR?

This 256 Mbit synchronous DRAM offers a combination of predictable synchronous performance, programmable burst and latency options, and robust refresh features in a 16M × 16 organization. Its 3.0–3.6 V single-supply operation and LVTTL interface make it suitable for embedded and industrial memory subsystems that require low-latency parallel SDRAM with reliable refresh control.

Designers seeking a TSOP-II packaged SDRAM with configurable timing, self-refresh capability and an extended operating temperature range will find the IS45S16160D-7TLA1-TR appropriate for applications that need deterministic synchronous memory behavior and straightforward board-level integration.

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