IS45S16160D-7BLA2

The IS45S16160D-7BLA2 is a 256 Mbit synchronous DRAM (SDRAM) organized as 16M x 16 with a parallel memory interface. It uses a pipeline architecture and fully synchronous operation with all signals referenced to the rising clock edge to support high-speed data transfer.

Designed for systems requiring a mid-density SDRAM device, the device operates from a 3.0 V to 3.6 V supply, supports a 143 MHz clock (CAS latency = 3) and offers an -40°C to 105°C operating range in the provided package option.

Key Features

• Memory Organization: 256 Mbit DDR organized as 16M × 16, providing a compact density for mid-range memory requirements.
• SDRAM / Fully Synchronous Interface: Fully synchronous operation with all inputs and outputs referenced to the positive clock edge and LVTTL signaling as documented in the datasheet.
• Performance: Supports a 143 MHz clock frequency (CAS latency = 3) with an access time from clock of 5.4 ns for CAS = 3.
• Power: Single power supply operation at 3.0 V to 3.6 V.
• Burst and Latency Control: Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); programmable CAS latency options (2 or 3 clocks) per datasheet.
• Refresh and Self-Management: Auto Refresh (CBR) and Self Refresh modes supported; 8K refresh cycles as specified by device grade options in the datasheet.
• Bank Architecture: Internal bank structure for hiding row access/precharge and support for random column address every clock cycle.
• Package: 54-ball TFBGA package (54-TFBGA, 8 × 13 ball array) suitable for surface-mount applications.
• Temperature Range: Specified operating temperature down to -40°C and up to 105°C (TA) as provided in the product specifications.

Typical Applications

• High-speed buffering and frame storage: Use where synchronous, pipelined 256 Mbit DRAM is required for rapid data transfer and short access times.
• Embedded memory subsystems: For systems that need a parallel SDRAM with programmable burst lengths and CAS latency control to match system timing.
• Temperature-challenged electronics: Deployments that require operation across a wide temperature range (−40°C to 105°C) while maintaining SDRAM functionality.

Unique Advantages

• Pipeline architecture for high-speed transfers: The device's synchronous, pipelined design enables efficient high-speed data movement referenced to the clock edge.
• Flexible burst and latency programming: Programmable burst lengths and CAS latency options allow designers to tune memory behavior to system timing and throughput needs.
• Single-supply operation: 3.0 V to 3.6 V single power supply simplifies power-rail requirements and integration into 3.3 V systems.
• Integrated refresh support: Auto Refresh and Self Refresh modes with defined refresh cycles reduce system refresh management overhead.
• Compact BGA package: 54-TFBGA (8×13) package provides a space-efficient surface-mount solution for board-level integration.

Why Choose IS45S16160D-7BLA2?

The IS45S16160D-7BLA2 delivers a balanced combination of mid-density 256 Mbit capacity, synchronous pipeline architecture and configurable timing features suited to systems that require predictable, clock-referenced memory performance. Its 16M × 16 organization, programmable burst/latency options and support for self/auto refresh make it suitable for designs that demand flexible memory timing and reliable data throughput.

This device is appropriate for engineers and procurement teams specifying SDRAM on a 3.3 V power rail who need a compact 54-ball TFBGA package and an extended operating temperature range. The documented timing parameters and refresh options support deterministic system integration and long-term use in temperature-variant environments.

Request a quote or submit a request for pricing and availability to include the IS45S16160D-7BLA2 in your next design.