IS45S16160D-7BLA1

The IS45S16160D-7BLA1 is a 256‑Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface. It uses a pipelined SDRAM architecture with fully synchronous operation referenced to the rising edge of the clock to enable high‑speed data transfer.

Typical use cases include high‑speed system memory and data buffering in designs requiring programmable burst behavior, selectable CAS latency, and operation across a wide temperature range. Key value propositions are predictable synchronous timing, flexible burst/latency programming, and a compact 54‑TFBGA package for space‑constrained boards.

Key Features

• Core Architecture Fully synchronous SDRAM with pipeline architecture; all inputs and outputs referenced to the positive clock edge.
• Memory Organization 256 Mbit capacity organized as 16M × 16 with internal banks to hide row access and precharge operations.
• Performance Clock frequency up to 143 MHz (device -7); access time from clock as low as 5.4 ns (CAS‑3); programmable CAS latency of 2 or 3 clocks.
• Burst and Access Modes Programmable burst length (1, 2, 4, 8, full page) with selectable sequential or interleave burst sequences; burst read/write and burst read/single write supported; burst termination via burst stop and precharge commands.
• Refresh and Self‑Refresh Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles with options for 16 ms or 64 ms refresh windows depending on grade.
• Interface and Logic Levels LVTTL compatible signals for control and address pins; parallel memory interface with random column address every clock cycle.
• Power Single power supply: 3.3 V ± 0.3 V (product data lists operating range 3.0 V to 3.6 V).
• Package and Temperature 54‑TFBGA (54‑ball BGA, 8×13) supplier device package; specified operating temperature range −40 °C to +85 °C (TA).

Typical Applications

• Embedded system memory — Used as synchronous DRAM for system-level data storage and buffering where a parallel SDRAM interface is required.
• High‑speed data buffers — Supports burst transfers and programmable CAS latency for designs that need predictable, pipelined data throughput.
• Industrial electronics — Operates over −40 °C to +85 °C for thermally demanding environments.

Unique Advantages

• Deterministic synchronous timing: Fully synchronous, clock‑edge referenced operation simplifies timing analysis and integration into pipeline designs.
• Flexible performance tuning: Programmable CAS latency and burst length/sequence let designers balance latency and throughput for target workloads.
• Compact BGA footprint: 54‑TFBGA package (8×13) reduces board area while providing the necessary pinout for a parallel SDRAM interface.
• Robust refresh options: Auto and self‑refresh with selectable refresh timing modes (8K cycles per 16 ms or 64 ms) support varied system requirements.
• Wide supply tolerance: 3.3 V ±0.3 V supply range (3.0–3.6 V) accommodates typical 3.3 V system rails.

Why Choose IS45S16160D-7BLA1?

The IS45S16160D-7BLA1 provides a balanced combination of synchronous SDRAM performance and design flexibility. With pipeline architecture, programmable CAS latency, and burst options, it delivers predictable, high‑speed transfers suitable for embedded memory and buffering roles. Its 54‑TFBGA package and industrial temperature rating make it a practical choice for space‑constrained and thermally varied designs.

This device is well suited to designers seeking a verified 256‑Mbit SDRAM with selectable timing and refresh behaviors, straightforward LVTTL interfacing, and a single 3.3 V supply requirement for integration into existing system memory subsystems.

Request a quote or contact sales to discuss availability, lead times, and integration support for the IS45S16160D-7BLA1.