IS45S16160D-7BLA2-TR

The IS45S16160D-7BLA2-TR is a 256‑Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel memory interface and pipeline architecture. All inputs and outputs are referenced to the rising edge of the clock, providing fully synchronous operation for predictable timing.

Designed for high‑speed system memory needs, this device offers programmable burst modes, selectable CAS latency, and built‑in refresh/self‑refresh capabilities, packaged in a compact 54‑TFBGA (8 × 13) footprint and specified for a wide operating temperature range.

Key Features

• Memory Capacity & Organization — 256 Mbit total capacity organized as 16M × 16, suitable for parallel DRAM system interfaces.
• SDRAM Architecture — Fully synchronous design with pipeline architecture; all signals referenced to a positive clock edge for predictable timing.
• Performance — Specified for 143 MHz clock operation (‑7 speed grade) with an access time from clock of 5.4 ns at CAS latency = 3.
• Programmable Burst & CAS — Programmable burst lengths (1, 2, 4, 8, full page), selectable sequential or interleaved burst sequence, and CAS latency options of 2 or 3 clocks.
• Refresh & Power Management — Auto Refresh and Self Refresh supported; refresh options include 8K cycles per 16 ms (A2 grade) or 64 ms (commercial/industrial/A1 grade).
• Interface & Logic Levels — LVTTL compatible signals with parallel memory interface; random column address every clock cycle and support for burst read/write and burst read/single write operations.
• Power Supply — Single 3.3 V supply (typical 3.3 V ±0.3 V; 3.0 V to 3.6 V operating range).
• Package & Temperature — 54‑ball TFBGA (8 × 13) package; operating temperature range listed as −40 °C to +105 °C (TA).

Unique Advantages

• Deterministic synchronous timing: Fully synchronous, clock‑referenced I/O and pipeline architecture simplify timing analysis and system integration.
• Flexible data transfer: Programmable burst lengths and sequences plus random column access every cycle enable adaptable throughput patterns.
• Compact BGA footprint: 54‑TFBGA (8 × 13) package reduces board area compared with larger memory packages.
• Wide operating range: Specification down to −40 °C and up to +105 °C supports deployment in thermally demanding environments.
• Single‑rail power: Operation from a single 3.3 V supply simplifies power rail design and sequencing.

Why Choose IS45S16160D-7BLA2-TR?

This IS45S16160D‑7BLA2‑TR device combines a 256‑Mbit SDRAM density with fully synchronous, pipeline architecture and programmable burst/CAS options to deliver predictable, high‑speed memory behavior for systems requiring parallel SDRAM. Its refresh and self‑refresh features, LVTTL interface, and single 3.3 V power supply facilitate straightforward integration into existing memory subsystems.

Engineers specifying this part will find a balance of performance, compact packaging, and a wide operating temperature range that supports robust designs where space and thermal tolerance are considerations.

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