IS45S16160D-7BLA1-TR

The IS45S16160D-7BLA1-TR is a 256 Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with internal bank architecture. It implements a fully synchronous, pipelined design with all signals referenced to the rising edge of the clock to support high-speed parallel memory access.

Designed for systems that require a parallel LVTTL SDRAM interface with programmable burst modes and refresh features, this device provides deterministic timing, single-supply 3.3 V operation, and a compact 54-ball TFBGA package for space-constrained board designs.

Key Features

• Core / Architecture  Fully synchronous SDRAM with pipelined architecture and internal bank structure (bank address pins BA0, BA1) for efficient row access and precharge management.
• Memory Organization  256 Mbit capacity organized as 16M × 16 with multiple internal banks to support burst and random column access every clock cycle.
• Performance & Timing  Clock frequency up to 143 MHz for the -7 device timing; access time 5.4 ns (CAS latency = 3). Programmable CAS latency (2 or 3 clocks) and programmable burst lengths (1, 2, 4, 8, full page).
• Burst & Refresh  Programmable burst sequence (sequential or interleave), burst read/write and burst read/single write capability, burst termination via burst stop or precharge command, plus auto-refresh and self-refresh modes.
• Interface  LVTTL-compatible parallel interface for standard SDRAM system connections.
• Power  Single power supply operation: 3.3 V ±0.3 V (specified 3.0 V to 3.6 V).
• Package  54-ball TFBGA (8 × 13) package for dense board mounting and reduced footprint.
• Temperature Range  Specified operating ambient temperature range of −40 °C to +85 °C (TA).

Typical Applications

• Embedded Systems  Parallel LVTTL SDRAM memory for embedded controllers and processing modules that require 256 Mbit volatile storage.
• Industrial Electronics  Memory subsystem for industrial designs requiring −40 °C to +85 °C operation and single-supply 3.3 V compatibility.
• Synchronous Data Buffers  High-speed buffer memory in systems using programmable burst sequencing and CAS latency options for tuned throughput and latency.

Unique Advantages

• Synchronous, pipelined operation: Ensures all signals are referenced to the rising clock edge for predictable timing and system integration.
• Flexible burst control: Programmable burst length and sequence (sequential/interleave) let designers optimize throughput for varying access patterns.
• Deterministic timing options: Programmable CAS latency (2 or 3) and documented access times (5.4 ns at CL=3 for the -7 timing) for latency-sensitive designs.
• Single-supply 3.3 V operation: Simplifies power distribution by operating within a 3.0 V to 3.6 V supply window (3.3 V ±0.3 V).
• Compact 54-ball TFBGA: Small footprint package (54-TFBGA, 8×13) to save board area while providing robust ball-grid connectivity.
• Refresh and low-power modes: Auto-refresh and self-refresh support with selectable refresh intervals (8K cycles per refresh window options documented) to maintain data integrity.

Why Choose IS45S16160D-7BLA1-TR?

The IS45S16160D-7BLA1-TR positions itself as a straightforward 256 Mbit parallel SDRAM option when a compact, fully synchronous memory device is required. With a programmable burst engine, selectable CAS latencies, and documented timing for the -7 (143 MHz / 5.4 ns access at CL=3), it addresses designs that need predictable high-speed parallel memory access in a small 54-ball TFBGA footprint.

Backed by Integrated Silicon Solution, Inc., this device suits engineers targeting embedded and industrial platforms that operate from a single 3.3 V supply and require -40 °C to +85 °C ambient temperature support, while leveraging standard LVTTL parallel signaling and flexible refresh/burst features.

Request a quote or submit an inquiry to get pricing and availability details for the IS45S16160D-7BLA1-TR.