IS43R86400F-6TLI-TR

IC DRAM 512MBIT PAR 66TSOP II
Part Description

IC DRAM 512MBIT PAR 66TSOP II

Quantity 839 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package66-TSOP IIMemory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeIndustrial
Clock Frequency166 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization64M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS43R86400F-6TLI-TR - 512Mb DDR SDRAM

The IS43R86400F-6TLI-TR from ISSI is a 512-megabit synchronous dynamic random-access memory (SDRAM) chip utilizing DDR (Double Data Rate) technology. Organized as 64M x 8, this memory device operates at a 166 MHz clock frequency and provides fast data transfer rates for embedded systems requiring reliable, high-speed volatile memory. Designed for industrial temperature ranges and packaged in a space-efficient 66-pin TSOP II format, this SDRAM serves applications from consumer electronics to industrial control systems.

Key Features

  • High-Density Memory Organization - The 64M x 8 configuration delivers 512 megabits of storage capacity, providing ample memory for data-intensive embedded applications while maintaining a straightforward parallel interface.
  • DDR SDRAM Technology - Double Data Rate architecture transfers data on both rising and falling clock edges, effectively doubling bandwidth compared to single data rate memory at the same clock frequency.
  • 166 MHz Clock Frequency - Operating at up to 166 MHz with a 7 nanosecond access time, this device supports fast read and write operations critical for time-sensitive applications.
  • Industrial Temperature Range - Rated for operation from -40°C to 85°C, ensuring reliable performance in harsh environments including automotive, industrial, and outdoor installations.
  • Low Voltage Operation - Operates on a 2.3V to 2.7V supply, reducing power consumption and heat generation in portable and power-sensitive designs.
  • Space-Efficient Package - The 66-pin TSOP II package with 10.16mm width offers a compact footprint suitable for space-constrained PCB layouts.

Typical Applications

  • Industrial Automation - This SDRAM provides reliable memory for programmable logic controllers (PLCs) and human-machine interfaces (HMIs) where the extended temperature tolerance ensures consistent operation in factory floor environments subject to temperature fluctuations.
  • Automotive Infotainment Systems - The industrial temperature rating and stable performance make this memory suitable for in-vehicle entertainment systems, navigation units, and dashboard displays that must operate reliably across extreme temperature conditions.
  • Embedded Computing Platforms - Single-board computers and embedded controllers leverage this parallel interface SDRAM for main system memory, benefiting from the straightforward integration and proven DDR technology.
  • Networking Equipment - Routers, switches, and network attached storage devices use this SDRAM for packet buffering and data processing where the 166 MHz clock frequency supports high-throughput data handling.
  • Point-of-Sale Terminals - The wide operating temperature range and compact package make this memory ideal for retail terminals and kiosks deployed in various environmental conditions from outdoor installations to temperature-variable retail spaces.

Unique Advantages

  • Simplified BOM Management: The active lifecycle status and availability from major distributors ensure long-term supply continuity, reducing obsolescence risk in product designs with multi-year lifecycles.
  • Proven DDR Technology: Leveraging mature and well-understood DDR SDRAM architecture simplifies firmware development and reduces integration risk compared to newer memory technologies requiring specialized controllers.
  • Flexible Interface Compatibility: The parallel interface design integrates easily with a wide range of microprocessors, FPGAs, and SoCs without requiring complex high-speed serial protocols or additional PHY components.
  • Cost-Effective Density: The 512-megabit capacity hits the sweet spot for many embedded applications, providing sufficient memory without the cost premium of higher-density devices.
  • Thermal Stability: Low voltage operation combined with industrial temperature rating ensures reliable data retention and reduces the need for extensive thermal management solutions.
  • Design Reuse: Standard TSOP II package and pinout enable easy migration between different density options within the same product family, facilitating scalable product lines.

Why Choose IS43R86400F-6TLI-TR?

This SDRAM is an excellent choice for engineers designing industrial-grade embedded systems that require dependable volatile memory with proven technology. The combination of industrial temperature rating, compact packaging, and straightforward parallel interface makes it particularly well-suited for applications where reliability and ease of integration outweigh the need for cutting-edge memory bandwidth. ISSI's track record in memory solutions and the active lifecycle status provide confidence for designs requiring long-term availability.

Whether you're developing industrial control systems, automotive electronics, or embedded computing platforms, this DDR SDRAM delivers the performance and reliability needed for mission-critical applications while keeping design complexity and costs in check.

Get Started

Ready to integrate the IS43R86400F-6TLI-TR into your next design? Contact our technical sales team for pricing, availability, and engineering support. We can assist with product selection, provide reference designs, and help ensure your project stays on schedule.

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