IS45S16160D-6BLA1

The IS45S16160D-6BLA1 is a 256‑Mbit synchronous DRAM device organized as 16M × 16 with 4 internal banks. It implements a pipelined, fully synchronous architecture with all signals referenced to the rising edge of the system clock.

Designed for systems that require a parallel SDRAM interface and high‑speed data transfers, this device offers programmable burst operation, selectable CAS latency, and refresh/self‑refresh support while operating from a single 3.3 V ±0.3 V supply.

Key Features

• Memory Architecture  256 Mbit SDRAM organized as 16M × 16 with 4 internal banks; pipelined, fully synchronous design.
• Performance  Clock frequency up to 166 MHz (CAS latency = 3); access time from clock as low as 5.4 ns at CL = 3.
• Burst and Sequencing  Programmable burst length (1, 2, 4, 8, full page) and burst sequence (Sequential/Interleave); supports burst read/write and burst read/single write with burst termination via burst stop and precharge.
• Refresh and Self‑Refresh  Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles every 16 ms for A2 grade or every 64 ms for commercial/industrial/A1 grade (as specified in device options).
• Interface and Signaling  Parallel memory interface with LVTTL‑compatible signaling; random column address every clock cycle.
• Power  Single power supply: 3.3 V ±0.3 V (3.0–3.6 V).
• Package and Temperature  54‑ball TFBGA (8×13) package; specified operating temperature range −40 °C to +85 °C (TA).
• Programmability and Timing  Programmable CAS latency (2 or 3 clocks) and timing options to match system performance needs.

Typical Applications

• System Memory / External DRAM  Provides 256 Mbit of parallel SDRAM for systems that require synchronous, banked DRAM memory with programmable burst and CAS options.
• High‑Speed Buffering  Pipelined architecture and random column access every clock cycle enable high‑throughput buffering in data‑path applications.
• Embedded Platforms  Parallel LVTTL interface and compact 54‑TFBGA package make the device suitable for embedded designs requiring external SDRAM.
• Industrial Equipment  Rated for operation from −40 °C to +85 °C, supporting deployment in temperature‑sensitive environments.

Unique Advantages

• Configurable Performance: Programmable CAS latency and multiple burst lengths allow designers to tune latency and throughput to match system requirements.
• High‑Speed Operation: Support for up to 166 MHz clocking and 5.4 ns access time (CL = 3) provides fast synchronous data transfers.
• Flexible Refresh Modes: Auto refresh and self‑refresh options with selectable refresh cadence (8K cycles per refresh interval) simplify power and data integrity management.
• Single‑Supply Simplicity: Operates from a single 3.3 V ±0.3 V supply (3.0–3.6 V), reducing power‑rail complexity in system designs.
• Compact BGA Package: 54‑ball TFBGA (8×13) package saves board area while providing standard ball layout for high‑density designs.

Why Choose IS45S16160D-6BLA1?

The IS45S16160D-6BLA1 combines a fully synchronous, pipelined SDRAM architecture with programmable timing, burst control, and robust refresh options to deliver predictable, high‑speed memory behavior in systems using a parallel interface. Its single‑supply operation and compact 54‑TFBGA package support integration into space‑constrained designs.

This device is well suited to engineers and procurement teams specifying external SDRAM where configurable latency, burst sequencing, and industrial temperature operation (−40 °C to +85 °C) are required. The documented timing and refresh options make the part a practical choice for designs that require deterministic, synchronous memory performance.

Request a quote or submit a procurement inquiry for IS45S16160D-6BLA1 to receive pricing and availability information tailored to your project needs.