IS43R86400F-6TL

The IS43R86400F-6TL is a 512 Mbit volatile DDR SDRAM organized as 64M × 8 and implemented for board-level memory applications that require SSTL_2 signaling. It provides DDR architecture performance with specified timing and voltage ranges suitable for systems operating in the commercial temperature range.

Designed in a 66‑TSSOP (66‑TSOP II) package, this device targets compact memory implementations where a 512 Mbit, SSTL_2‑compatible SDRAM is required and where supply voltage, timing and package dimensions are constrained by system requirements.

Key Features

• Memory Architecture 512 Mbit DDR SDRAM organized as 64M × 8, supporting standard DRAM memory formatting for volatile storage.
• Technology & Interface SDRAM – DDR technology with SSTL_2 memory interface for systems requiring SSTL_2 signaling.
• Performance Rated clock frequency of 167 MHz with an access time of 700 ps and a write cycle time (word/page) of 15 ns to support high‑speed data transfers.
• Power and Voltage Operates from a 2.3 V to 2.7 V supply range, providing defined power requirements for designs using SSTL_2 signaling levels.
• Package Supplied in a 66‑TSSOP (0.400", 10.16 mm width) 66‑TSOP II package for compact board mounting.
• Operating Conditions Commercial operating temperature range specified as 0°C to 70°C (TA).

Typical Applications

• Board-level DDR memory expansion — Provides a 512 Mbit DDR SDRAM option for systems requiring additional volatile memory in a compact 66‑TSSOP package.
• SSTL_2 signaling systems — Suited to designs that use SSTL_2 memory interfaces and require matched electrical signaling and voltage ranges.
• High-speed buffering — Applicable where DDR SDRAM performance (167 MHz clock, 700 ps access) is needed for temporary data storage and buffering.
• Commercial-temperature electronics — Intended for devices and modules operating within the 0°C to 70°C ambient temperature range.

Unique Advantages

• Compact package footprint: 66‑TSSOP (66‑TSOP II) package enables higher board density and simplified placement for space‑constrained designs.
• SSTL_2 interface compatibility: Native SSTL_2 signaling support aligns the device with systems specifying that memory interface and voltage domain.
• DDR performance characteristics: 167 MHz clock rating, 700 ps access time and 15 ns write cycle time provide measurable timing for high‑speed memory subsystems.
• Defined supply range: 2.3 V to 2.7 V supply requirement allows straightforward integration with SSTL_2 power rails.
• Commercial temperature support: Specified 0°C to 70°C operating range for use in standard commercial applications.
• Clear memory density and organization: 512 Mbit capacity with 64M × 8 organization simplifies system memory planning and addressing.

Why Choose IS43R86400F-6TL?

The IS43R86400F-6TL is positioned for designs that require a 512 Mbit DDR SDRAM with SSTL_2 signaling in a compact 66‑TSSOP package. Its defined electrical, timing and thermal specifications make it suitable for engineers specifying board‑level DDR memory where supply voltage, package size and commercial operating temperature are key constraints.

Manufactured by Integrated Silicon Solution Inc., this device is appropriate for development teams and procurement professionals specifying a straightforward, measurable DDR SDRAM option for systems needing 64M × 8 organization, 167 MHz clock support, and SSTL_2 interface compatibility.

Request a quote or submit an inquiry to get pricing and availability information for the IS43R86400F-6TL and to discuss how this 512 Mbit DDR SDRAM fits your design requirements.