IS43R86400F-6BLI-TR
| Part Description |
IC DRAM 512MBIT PAR 60TFBGA |
|---|---|
| Quantity | 441 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 60-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS43R86400F-6BLI-TR - 512Mbit DDR SDRAM Memory IC
The IS43R86400F-6BLI-TR is a 512Mbit DDR SDRAM memory IC from ISSI, Integrated Silicon Solution Inc. Organized as 64M x 8, this volatile memory delivers high-bandwidth parallel data access at 166MHz clock frequency, making it well-suited for applications requiring fast, temporary data storage. With an industrial temperature range of -40°C to 85°C, this memory IC serves embedded systems, industrial controllers, and communication equipment where performance and reliability are essential.
Key Features
- High-Density Memory Architecture - 512Mbit capacity organized as 64M x 8 provides substantial data storage in a compact footprint, enabling efficient buffering and data processing in space-constrained designs.
- DDR SDRAM Technology - Double data rate synchronous DRAM delivers twice the data throughput of conventional SDRAM by transferring data on both rising and falling clock edges, maximizing bandwidth efficiency.
- 166MHz Clock Operation - 166MHz clock frequency with 0.7ns access time supports high-speed data transfer requirements in real-time processing applications.
- Industrial Temperature Performance - -40°C to 85°C operating range ensures reliable operation in harsh environmental conditions typical of industrial automation and outdoor equipment.
- Compact 60-TFBGA Package - 8mm x 13mm thin fine-pitch ball grid array package minimizes board space while providing excellent thermal performance and signal integrity.
- Low Voltage Operation - 2.3V to 2.7V supply voltage reduces power consumption and heat generation, supporting energy-efficient designs and portable applications.
Typical Applications
- Industrial Automation Systems - This DDR SDRAM provides high-speed data buffering for programmable logic controllers (PLCs) and human-machine interfaces (HMIs), where the industrial temperature range ensures consistent operation in factory floor environments.
- Network and Communication Equipment - The 166MHz operation and parallel interface support packet buffering and data routing in switches, routers, and telecommunications infrastructure where rapid data access is critical.
- Embedded Computing Platforms - This memory IC serves as system RAM in embedded processors and single-board computers, providing the volatile storage needed for program execution and data processing in compact form factors.
- Medical Instrumentation - The reliable industrial-grade performance makes this SDRAM suitable for diagnostic equipment and patient monitoring systems where data integrity and temperature stability are essential.
- Automotive Infotainment - The 512Mbit capacity and wide temperature tolerance support multimedia processing and display systems in vehicle dashboard and entertainment applications.
Unique Advantages
- Extended Temperature Reliability: Industrial temperature range eliminates the need for additional thermal management in harsh environments, simplifying system design and reducing BOM costs.
- Optimized Memory Organization: The 64M x 8 configuration aligns efficiently with 8-bit and 16-bit processor architectures, minimizing interface complexity and reducing routing requirements.
- Fast Write Cycle Performance: 15ns write cycle time enables rapid data updates critical for real-time control systems and high-throughput data logging applications.
- Proven DDR Technology: Mature DDR SDRAM architecture offers excellent price-performance balance with broad ecosystem support for controllers, design tools, and reference designs.
- Space-Efficient Footprint: The 60-pin TFBGA package delivers high pin density in a small 8mm x 13mm area, maximizing board space for other components in compact embedded designs.
- Active Lifecycle Status: Current production availability ensures long-term supply security for product development and multi-year manufacturing commitments.
Why Choose the IS43R86400F-6BLI-TR?
The IS43R86400F-6BLI-TR represents an ideal memory solution for industrial and embedded applications requiring reliable, high-performance volatile storage. Its combination of 512Mbit capacity, 166MHz DDR operation, and -40°C to 85°C temperature range makes it particularly well-suited for designs operating in challenging environments. Engineers designing industrial controllers, communication equipment, or embedded computing platforms will appreciate the balance of performance, reliability, and compact packaging.
With active lifecycle status and support from ISSI, this memory IC provides the long-term availability and technical backing needed for products with extended lifecycles. The proven DDR SDRAM technology reduces development risk while the industrial temperature qualification ensures consistent performance across diverse operating conditions.
Get Started Today
The IS43R86400F-6BLI-TR is available for immediate integration into your next design. Contact our sales team to request detailed specifications, pricing information, or technical support for your application. Our team can help you evaluate this memory IC for your specific requirements and ensure optimal performance in your system.
