IS43R86400F-6TL-TR

The IS43R86400F-6TL-TR is a 512 Mbit DDR SDRAM device organized as 64M × 8, manufactured by Integrated Silicon Solution Inc (ISSI). It implements a DDR SDRAM architecture with an SSTL_2 memory interface and is supplied in a 66‑TSSOP / 66‑TSOP II package.

This device is intended for board‑level external memory applications that require a compact 512 Mbit DDR DRAM with defined electrical and timing characteristics, including a 167 MHz clock frequency, 700 ps access time, and a supply range of 2.3 V to 2.7 V.

Key Features

• Memory Architecture DDR SDRAM technology organized as 64M × 8 for a total memory capacity of 512 Mbit.
• Interface SSTL_2 memory interface compatible with SSTL_2 signaling requirements as specified for the device.
• Performance 167 MHz clock frequency and 700 ps access time with a word page write cycle time of 15 ns for predictable timing behavior.
• Power Operates from a 2.3 V to 2.7 V supply range.
• Package 66‑TSSOP (0.400", 10.16 mm width) / 66‑TSOP II package for compact board integration.
• Operating Temperature Specified for 0 °C to 70 °C ambient (TA).
• Memory Format Volatile DRAM suitable for external system memory and buffering applications.

Typical Applications

• Embedded system external memory — Provides DDR external RAM for embedded platforms that require a 512 Mbit memory array.
• FPGA external DDR memory — Used as board‑level DDR memory for FPGAs and programmable logic where an SSTL_2 interface is present.
• Board‑level data buffering — Suitable for applications requiring transient data storage and buffering with defined timing characteristics.

Unique Advantages

• High density in a compact package: 512 Mbit capacity delivered in a 66‑TSSOP / 66‑TSOP II package (10.16 mm width) for space‑constrained designs.
• SSTL_2 signaling: Native SSTL_2 memory interface support aligns the device with controllers and systems using SSTL_2 standards.
• Defined timing performance: 167 MHz clock frequency, 700 ps access time, and 15 ns write cycle time provide measurable performance metrics for system design.
• Low‑voltage operation: 2.3 V to 2.7 V supply range supports lower voltage system rail architectures.
• Commercial temperature rating: Specified for 0 °C to 70 °C operation for typical commercial environments.
• Manufactured by ISSI: Produced by Integrated Silicon Solution Inc, providing traceable sourcing information.

Why Choose IS43R86400F-6TL-TR?

The IS43R86400F-6TL-TR offers a straightforward DDR SDRAM solution when a 512 Mbit, 64M × 8 memory is required with SSTL_2 interfacing and compact board footprint. Its documented clock, access, and cycle timing characteristics make it suitable for designs that need predictable external DRAM behavior within a 2.3 V–2.7 V power envelope.

Choose this device for designs that prioritize a known commercial temperature range (0 °C to 70 °C), compact 66‑TSSOP / 66‑TSOP II packaging, and a clear set of electrical and timing specifications from a recognized memory manufacturer.

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