IS45S16160D-7TLA2-TR

The IS45S16160D-7TLA2-TR is a 256 Mbit synchronous DRAM organized as 16M × 16 with pipeline architecture and internal bank structure. It provides parallel SDRAM interface operation with programmable burst modes and CAS latency options for predictable, clock-referenced data transfers.

Designed for systems that require on-board parallel SDRAM with up to 143 MHz clock capability, the device delivers configurable performance, refresh control and a compact 54-pin TSOP-II package for board-level memory expansion.

Key Features

• Core & Memory Architecture  Synchronous DRAM with pipeline architecture and internal banks to hide row access/precharge; organized as 16M × 16 with 4 banks.
• Performance  Clock frequency up to 143 MHz (–7 grade) with programmable CAS latency (2 or 3 clocks) and access time from clock as low as 5.4 ns (CAS = 3).
• Burst & Sequencing  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave) with burst read/write and burst read/single write support.
• Refresh & Power Management  Auto Refresh and Self Refresh supported; 8K refresh cycles with selectable timing (16 ms for A2 grade or 64 ms for commercial/industrial/A1 grade). Single power supply operation at 3.0 V to 3.6 V.
• Interface  Parallel memory interface with LVTTL-compatible signals referenced to the rising clock edge for synchronous operation.
• Package & Temperature  54-pin TSOP-II (0.400", 10.16 mm width) package. Operating temperature range specified from −40°C to +105°C (TA).

Typical Applications

• Parallel memory expansion  For system designs requiring a 256 Mbit parallel SDRAM with programmable burst and CAS options.
• On-board SDRAM for embedded systems  For embedded designs needing a 16M × 16 SDRAM organized device with synchronous, clock-referenced I/O.
• Wide-temperature or industrial systems  Where a −40°C to +105°C operating range and 3.0–3.6 V supply are required for robust operation.

Unique Advantages

• Synchronous pipeline architecture: Enables clock-referenced I/O and predictable timing for high-speed data transfers.
• Internal bank structure: Hides row access/precharge latency to improve effective throughput for burst operations.
• Programmable timing and burst control: CAS latency, burst length and sequence options let designers tune performance to system timing requirements.
• Flexible refresh modes: Auto Refresh and Self Refresh with selectable refresh intervals (8K cycles per 16 ms or 64 ms) for power and data integrity management.
• Compact board-level footprint: 54-pin TSOP-II package provides a space-efficient form factor for memory expansion on PCBs.
• Wide voltage and temperature operating window: 3.0–3.6 V supply range and −40°C to +105°C operating temperature for diverse deployment environments.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS45S16160D-7TLA2-TR delivers a documented, synchronous 256 Mbit DRAM option with configurable timing and burst modes that suit designs needing predictable, clock-aligned memory performance. Its 16M × 16 organization, internal bank architecture and support for CAS latency selection make it suitable for systems requiring flexible throughput tuning.

With single-supply operation, defined refresh behavior and a compact 54-pin TSOP-II package, this device is appropriate for engineers seeking a board-level parallel SDRAM that combines timing detail and thermal/voltage range for robust integration and long-term use.

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