IS45S16160G-6TLA1

The IS45S16160G-6TLA1 is a 256 Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel memory interface. The device uses a pipelined architecture to enable high-speed, fully synchronous data transfers referenced to the rising edge of the clock.

Designed for board-level memory requirements, this part supports up to 166 MHz clock operation, 5.4 ns access time, a single 3.0 V–3.6 V supply range, and a 54-pin TSOP II package with an operating temperature range of −40 °C to +85 °C.

Key Features

• Memory Architecture  256 Mbit SDRAM organized as 16M × 16 with internal banks and parallel interface for predictable system integration.
• Performance  Supports up to 166 MHz clock frequency with an access time of 5.4 ns (–6 speed grade) and programmable CAS latency (2 or 3 clocks) for timing flexibility.
• Burst and Sequencing  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (Sequential/Interleave) enable efficient burst read/write operations and burst termination.
• Refresh and Retention  Auto Refresh and Self Refresh supported; refresh rate options include 8K cycles per 32 ms or 64 ms depending on grade.
• Power and Interface  Single power supply operation (3.0 V–3.6 V) with LVTTL-compatible interface signaling for standard parallel SDRAM connections.
• Package and Temperature  Available in a 54-pin TSOP II (10.16 mm width) package and specified for −40 °C to +85 °C ambient operation.
• Synchronous, Pipelined Operation  Fully synchronous device with all signals referenced to the positive clock edge, enabling predictable timing in pipelined memory systems.

Typical Applications

• High-speed system memory  Acts as parallel SDRAM for designs that require a 256 Mbit synchronous memory resource with up to 166 MHz operation.
• Burst buffering and data staging  Programmable burst lengths and burst sequencing support efficient burst read/write buffering and data staging.
• Temperature-aware designs  Suited to board-level memory implementations that require operation across −40 °C to +85 °C.
• Space-constrained PCB layouts  The 54-pin TSOP II package provides a compact footprint for dense board designs.

Unique Advantages

• Flexible timing modes  Programmable CAS latency and multiple clock-speed options let designers tune performance to system timing requirements.
• Programmable burst control  Burst length and sequence programmability provide adaptable throughput and memory access patterns for varied workloads.
• Pipelined synchronous architecture  All signals referenced to the rising clock edge and internal bank architecture enable consistent, high-speed transfers.
• Single-supply operation  3.0 V–3.6 V supply range simplifies power-rail design while matching standard SDRAM voltage domains.
• Compact package with industrial temperature  54-TSOP II packaging and −40 °C to +85 °C rating support compact board designs requiring extended temperature operation.
• Robust refresh options  Auto Refresh and Self Refresh modes with selectable refresh intervals help maintain data integrity across operating conditions.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

IS45S16160G-6TLA1 positions itself as a versatile 256 Mbit SDRAM solution for designs that need synchronous, pipelined memory with configurable burst behavior and timing. Its 16M × 16 organization, programmable CAS latency, and 166 MHz speed grade provide a balance of throughput and timing flexibility for board-level memory subsystems.

Backed by Integrated Silicon Solution, Inc., this device addresses applications requiring compact TSOP II packaging and industrial temperature operation while offering flexible refresh and burst options to match system memory management strategies.

Request a quote or submit an inquiry to receive pricing, lead-time, and availability information for IS45S16160G-6TLA1.