IS45S16160G-7BLA1-TR

The IS45S16160G-7BLA1-TR is a 256Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface in a 54-ball TFBGA (8×8) package. It uses a pipelined, fully synchronous architecture with internal bank management to support high-speed, clock-referenced data transfers.

Designed for systems that require 256Mbit of parallel SDRAM running from a 3.0–3.6 V supply, this device targets applications that need programmable burst operation, selectable CAS latency, and reliable refresh/self-refresh capability across an industrial temperature range.

Key Features

• Memory Density & Organization 256 Mbit capacity organized as 16M × 16 with four internal banks for efficient row access and precharge management.
• Synchronous SDRAM Architecture Fully synchronous operation with all signals referenced to the rising edge of the clock; pipelined design enables high-speed data transfer.
• Clock & Timing Supports clock frequencies up to 143 MHz for the –7 timing option and access time as low as 5.4 ns for CAS latency configurations.
• Programmable Burst and CAS Programmable burst lengths (including 1, 2, 4, 8 and full-page) and selectable burst sequence (sequential/interleave); programmable CAS latency (2 or 3 clocks) for timing flexibility.
• Refresh and Power Management Auto Refresh and Self Refresh supported with standard refresh counts (8K cycles) for reliable data retention.
• Interface & Signaling Parallel memory interface with LVTTL-compatible signaling for standard SDRAM system integration.
• Voltage and Package Operates from a 3.0 V to 3.6 V supply and supplied in a compact 54-TFBGA (8×8) package.
• Operating Temperature Specified for operation from −40°C to +85°C (TA), suitable for applications requiring extended temperature range.

Typical Applications

• Parallel system memory — Acts as external SDRAM for systems requiring 256 Mbit of parallel memory with selectable CAS latency and burst modes.
• High-speed buffering — Programmable burst lengths and a pipelined synchronous interface make it suitable for burst-mode data buffering and temporary frame storage.
• Embedded and industrial platforms — 3.0–3.6 V operation and −40°C to +85°C rating support integration into industrial embedded designs needing reliable SDRAM storage.

Unique Advantages

• Flexible timing options: Programmable CAS latency (2 or 3 clocks) and multiple burst lengths provide design flexibility to match system timing requirements.
• High-speed operation: Rated for up to 143 MHz (–7 speed grade) with 5.4 ns access time, enabling faster data throughput in synchronous designs.
• Compact BGA package: 54-TFBGA (8×8) reduces PCB footprint while providing a robust ball-grid mounting for dense system layouts.
• Standard 3.3 V compatibility: Operates across a 3.0–3.6 V range for straightforward integration with common 3.3 V systems.
• Built-in refresh management: Auto Refresh and Self Refresh support with standard refresh cycles simplifies memory maintenance and power management.
• Robust operation range: Specified for −40°C to +85°C (TA), supporting designs that require extended temperature performance.

Why Choose IC DRAM 256MBIT PAR 54TFBGA?

The IS45S16160G-7BLA1-TR delivers a compact, 256 Mbit synchronous DRAM solution with programmable timing, burst capabilities, and internal bank architecture to support high-speed parallel memory needs. Its combination of up to 143 MHz operation, selectable CAS latency, and standard refresh features make it well suited for applications requiring deterministic, clocked memory performance.

This device is a practical choice for engineers specifying external SDRAM in systems powered from a 3.0–3.6 V supply and operating across −40°C to +85°C. Its 54-TFBGA package and LVTTL-compatible interface simplify board integration while offering the timing flexibility needed for a range of embedded and industrial designs.

Request a quote or submit an inquiry for pricing and availability of the IS45S16160G-7BLA1-TR to evaluate its suitability for your design requirements.