IS45S16160G-6CTLA1-TR

The IS45S16160G-6CTLA1-TR is a 256 Mbit synchronous DRAM (SDRAM) device organized as 16M × 16 with a parallel memory interface. It implements a pipelined, fully synchronous architecture with all signals referenced to the rising clock edge to support high-speed data transfer.

This device targets systems that require high-performance, volatile SDRAM with features such as programmable burst lengths, internal bank management for hidden row access/precharge, and support for auto and self-refresh modes. The IS45S16160G-6 speed grade supports a 166 MHz clock with a 5.4 ns access time.

Key Features

• Density & Organization — 256 Mbit capacity organized as 16M × 16, providing wide parallel data paths for system memory and buffering.
• Synchronous SDRAM Core — Fully synchronous operation with inputs and outputs referenced to the positive clock edge and pipeline architecture for high-speed transfers.
• Speed Grade — 166 MHz clock frequency (‑6 grade) with an access time of 5.4 ns for CAS latency settings as specified for this speed grade.
• Programmable Burst & CAS — Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); programmable CAS latency options (2 or 3 clocks).
• Refresh & Power Management — Supports Auto Refresh (CBR) and Self Refresh; 8K refresh cycles with 32 ms or 64 ms intervals depending on grade.
• Interface & Signaling — LVTTL-compatible interface and parallel memory interface for standard SDRAM control.
• Power — Single power supply: 3.3 V ±0.3 V (specified voltage range 3.0 V to 3.6 V).
• Package & Temperature — 54-pin TSOP-II package (0.400", 10.16 mm width) and operating temperature −40 °C to +85 °C (TA) for industrial range.
• Bank Architecture — Internal bank structure (4 banks) to hide row access/precharge and enable concurrent operations across banks.

Typical Applications

• System Memory Subsystems — Used as parallel SDRAM for designs requiring 256 Mbit volatile memory with 16-bit data width and 4-bank operation.
• High-Speed Buffering — Suited for buffering and burst-oriented data transfers where programmable burst lengths and interleave/sequential modes are required.
• Refresh-Critical Designs — Applicable in systems that require controlled refresh schemes (Auto Refresh and Self Refresh) with 8K refresh cycle support.

Unique Advantages

• Fixed 16-bit Organization: The 16M × 16 arrangement delivers a wide parallel data path that simplifies bus integration for 16-bit memory systems.
• Speed-Graded Performance: The -6 grade provides a 166 MHz clock and 5.4 ns access time, enabling predictable timing for high-speed designs.
• Flexible Burst Operations: Programmable burst lengths and sequences allow designers to optimize throughput and latency for specific access patterns.
• Integrated Bank Management: Four internal banks and hidden row access/precharge improve effective throughput for interleaved access patterns.
• Standard Power & Signaling: Single 3.3 V supply and LVTTL-compatible interface simplify power distribution and logic-level interfacing in existing designs.
• Industrial Temperature Range: Rated for −40 °C to +85 °C (TA), supporting deployments that require extended ambient temperature operation.

Why Choose IS45S16160G-6CTLA1-TR?

The IS45S16160G-6CTLA1-TR combines a 256 Mbit SDRAM capacity with a pipelined, fully synchronous architecture and a 16-bit data organization to deliver deterministic, high-speed parallel memory performance. Its programmable burst modes, banked internal architecture, and refresh features make it suitable for designs that require controlled, burst-oriented data transfer and reliable refresh management.

This device is well suited for engineers designing systems that need a 3.3 V single-supply SDRAM with a 54-pin TSOP-II package and industrial temperature operation. Its clear timing parameters and documented feature set support straightforward integration into memory subsystems where predictable, parallel SDRAM behavior is required.

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