IS45S16160G-6TLA1 -TR

The IS45S16160G-6TLA1 -TR is a 256 Mbit synchronous DRAM device organized as 16M × 16 with internal bank architecture and pipeline operation. It provides a parallel SDRAM interface with fully synchronous operation referenced to the rising clock edge, supporting high-speed burst transfers and programmable timing options.

This device targets embedded designs requiring compact, board-level parallel memory with a 54-pin TSOP-II package, single 3.3 V supply range, and an industrial operating range down to −40°C. Key value comes from its programmable burst modes, selectable CAS latencies, and a low access time that together enable predictable, high-throughput memory access patterns.

Key Features

• Memory Core  256 Mbit SDRAM organized as 16M × 16 with four internal banks for hidden row access and improved throughput.
• Performance  Rated for 166 MHz clock operation (–6 speed grade) with access time from clock of 5.4 ns and programmable CAS latency (2 or 3 clocks).
• Burst and Sequencing  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence modes (sequential/interleave) for flexible transfer patterns.
• Refresh and Power  Supports Auto Refresh (CBR) and Self Refresh; refresh options include 8K cycles per refresh interval per datasheet specifications.
• Interface  LVTTL-compatible parallel interface with all signals referenced to the positive clock edge for fully synchronous operation.
• Voltage  Single power supply: 3.3 V nominal (range 3.0 V to 3.6 V).
• Package & Mounting  54-pin TSOP-II (0.400", 10.16 mm width) surface-mount package for compact board-level integration.
• Operating Range  Specified operating ambient temperature range −40°C to +85°C (TA) for industrial-grade applications.

Unique Advantages

• Parallel SDRAM with banked architecture: Four internal banks and hidden row access reduce latency on mixed random and sequential access patterns.
• Flexible burst control: Programmable burst lengths and sequences let designers optimize transfers for burst-dominated workloads or page accesses.
• Low-latency operation at 166 MHz: 5.4 ns access time from clock and selectable CAS latency provide predictable timing for system designers.
• Standard 3.3 V supply window: Operates across 3.0–3.6 V, matching common board power rails for simpler power design.
• Compact TSOP-II footprint: 54-pin TSOP-II package enables high-density PCB layouts while keeping a standard package interface.
• Industrial temperature support: −40°C to +85°C rating allows deployment in temperature-variable environments.

Why Choose IS45S16160G-6TLA1 -TR?

The IS45S16160G-6TLA1 -TR balances compact board-level packaging with the flexibility of synchronous DRAM controls—programmable burst lengths, selectable CAS latencies, and banked architecture—to meet the timing and throughput needs of parallel-memory embedded systems. Its 166 MHz timing grade and 5.4 ns access time deliver predictable performance for designs that rely on burst transfers and deterministic memory behavior.

This device is well suited for engineers specifying a 256 Mbit parallel SDRAM in a 54-pin TSOP-II package who require a 3.3 V supply window and industrial ambient temperature capability. The combination of synchronous pipeline architecture and flexible refresh/burst features supports scalable, robust memory integration in constrained board layouts.

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