 | | IS43R86400F-5BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,388 | |
 | | IS43R86400F-5BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,443 | |
 | | IS43R86400F-5TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,977 | |
 | | IS43R86400F-5TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT SSTL 66TSOPII | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 760 | |
 | | IS43R86400F-5TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 564 | |
 | | IS43R86400F-5TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,602 | |
 | | IS43R86400F-6BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 38 | |
 | | IS43R86400F-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,203 | |
 | | IS43R86400F-6BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 911 | |
 | | IS43R86400F-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,528 | |
 | | IS43R86400F-6TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT SSTL 66TSOPII | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 142 | |
 | | IS43R86400F-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT SSTL 66TSOPII | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 727 | |
 | | IS43R86400F-6TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 289 | |
 | | IS43R86400F-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 227 | |
 | | IS45S16160D-6BLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 765 | |
 | | IS45S16160D-6BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,471 | |
 | | IS45S16160D-7BLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,830 | |
 | | IS45S16160D-7BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 12 | |
 | | IS45S16160D-7BLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 614 | |
 | | IS45S16160D-7BLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 967 | |