IS43R86400F-5TL-TR

The IS43R86400F-5TL-TR is a 512 Mbit volatile memory device implemented as DDR SDRAM with a 64M × 8 organization. It provides a 200 MHz clock frequency operation and uses an SSTL_2 memory interface for synchronous DRAM applications.

Packaged in a 66‑TSSOP (66‑TSOP II) footprint and specified for 0°C to 70°C ambient operation, the device targets designs requiring mid‑density DDR memory with a 2.3 V to 2.7 V supply range and defined timing characteristics (700 ps access time, 15 ns word/page write cycle time).

Key Features

• Memory Core 512 Mbit DRAM organized as 64M × 8, suitable where byte-wide synchronous memory is required.
• DDR SDRAM Technology Implemented as SDRAM - DDR, supporting synchronous double-data-rate operation at the specified clock frequency.
• Performance 200 MHz clock frequency with a 700 ps access time and a 15 ns write cycle time for word/page operations.
• Interface SSTL_2 memory interface for systems that require Stub Series Terminated Logic signaling.
• Power Operates from a 2.3 V to 2.7 V supply range, enabling integration into systems with low‑voltage DDR rails.
• Package & Mounting Available in a 66‑TSSOP (0.400", 10.16 mm width) 66‑TSOP II package for surface‑mount assembly.
• Operating Range Specified for ambient operating temperatures from 0°C to 70°C (TA).

Typical Applications

• Memory modules and boards Use as a 512 Mbit DDR SDRAM building block where a 64M × 8 configuration and SSTL_2 interface are required.
• High‑density buffer memory Suitable for designs needing mid‑density synchronous DRAM capacity with defined access timing.
• Embedded systems with SSTL_2 interfaces Integration into systems that require SSTL_2 signaling and a 2.3 V–2.7 V supply range.

Unique Advantages

• Defined DDR SDRAM architecture: Ready‑to‑use 64M × 8 DDR SDRAM organization simplifies memory subsystem design.
• SSTL_2 interface compatibility: Ensures proper signaling for systems designed around SSTL_2 memory interfaces.
• Compact surface‑mount package: 66‑TSSOP (66‑TSOP II) package provides a space‑efficient footprint for PCB layouts.
• Controlled timing characteristics: 200 MHz clock, 700 ps access time and 15 ns write cycle time enable predictable performance budgeting.
• Low‑voltage operation: 2.3 V to 2.7 V supply range aligns with common low‑voltage DDR rails.

Why Choose IS43R86400F-5TL-TR?

The IS43R86400F-5TL-TR offers a clear specification set for designers needing a 512 Mbit DDR SDRAM device with SSTL_2 signaling, compact 66‑TSSOP packaging, and defined timing and voltage parameters. Its combination of 64M × 8 organization, 200 MHz clocking, and specified access/write cycle times supports predictable memory subsystem integration in mid‑density applications.

This device is suited to teams and systems that require a standardized DDR memory element with known electrical and thermal limits (0°C to 70°C) and a 2.3 V–2.7 V supply window, helping streamline component selection and board-level implementation.

Request a quote or submit a parts inquiry to obtain pricing, availability, and lead‑time information for the IS43R86400F-5TL-TR.