IS43R16320D-6BI

The IS43R16320D-6BI is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface. It implements a double-data-rate architecture with four internal banks and is packaged in a 60‑TFBGA (8×13) footprint.

This device targets systems requiring high-speed, burstable volatile memory with programmable CAS latency and support for standard DDR features such as auto refresh and self refresh. Key value propositions include pipeline architecture for continuous read/write bursts, SSTL_2 compatible I/O, and operation across a wide supply and temperature range.

Key Features

• Memory Capacity & Organization — 512 Mbit total capacity internally organized as 32M × 16, implemented as four 128 Mb banks for concurrent operations.
• DDR Architecture — Double-data-rate operation provides two data transfers per clock cycle; supports burst lengths of 2, 4, and 8 with sequential and interleave burst types.
• Performance — Rated clock frequency up to 166 MHz for the -6 speed grade with programmable CAS latencies of 2, 2.5 and 3 to balance latency and throughput.
• Interfaces & Signaling — SSTL_2 compatible I/O, differential clock inputs (CK and /CK), and bidirectional data strobe (DQS) transmitted/received with data for edge- and center-aligned capture.
• Timing & Control — DLL aligns DQ and DQS with CK; commands are registered on positive CK edges and data/mask referenced to both edges of DQS. Write cycle time (word page) specified at 15 ns.
• Power — Operates from a 2.3 V to 2.7 V supply range; VDD and VDDQ specified around 2.5 V in datasheet options.
• Refresh & Low-Power Modes — Supports Auto Refresh and Self Refresh modes plus Auto Precharge for standard DRAM maintenance and power management.
• Package & Temperature — Supplied in a 60‑TFBGA (8×13) package; operating temperature range specified as -40°C to +85°C (TA).

Unique Advantages

• High-density DDR memory: 512 Mbit capacity in a compact 60‑TFBGA package enables significant on-board memory without large area penalty.
• Flexible timing options: Programmable CAS latencies and multiple burst lengths allow tuning for performance versus latency in system designs.
• SSTL_2 signaling: I/O compatibility makes integration with standard SSTL_2 systems straightforward for board-level design.
• Robust operating range: 2.3–2.7 V supply window and industrial temperature support (-40°C to +85°C) address a range of environmental conditions.
• Concurrent bank operation: Four internal banks and pipeline architecture enable efficient continuous read/write bursts for sustained throughput.

Why Choose IS43R16320D-6BI?

The IS43R16320D-6BI positions itself as a compact, high-density DDR SDRAM option for designs that require burstable, low-latency volatile memory with SSTL_2 compatible I/O. Its combination of programmable timing, four-bank architecture, and industrial temperature support makes it suitable for embedded systems and equipment that need reliable transient data storage and high-speed transfer.

Engineers can leverage the device’s flexible timing and burst configurations to tune memory behavior to application requirements while benefiting from a small 60‑TFBGA footprint and a broad supply voltage window for system-level design flexibility.

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