IS43R16320D-5TL

The IS43R16320D-5TL is a 512‑Mbit DDR SDRAM device from Integrated Silicon Solution, Inc. It implements a double‑data‑rate pipeline architecture with four internal banks and a 32M × 16 memory organization for parallel DDR memory applications.

Designed for systems requiring high‑speed, synchronous DRAM storage, the device delivers two data transfers per clock cycle and supports programmable burst and latency options to match varied memory access patterns.

Key Features

• Memory Architecture — 512 Mbit DDR SDRAM organized as 32M × 16 with four internal banks to support concurrent operations.
• Double‑Data‑Rate Operation — DDR architecture performs two data transfers per clock cycle; DQS (data strobe) is transmitted/received with data for capture at the receiver.
• Data Strobe and Clocking — DQS is edge‑aligned with data for READs and center‑aligned for WRITEs; differential clock inputs (CK and CK̄) and an internal DLL align DQ/DQS with CK transitions.
• Programmable Burst and Latency — Burst length options of 2, 4, and 8; burst types sequential and interleave; programmable CAS latency options 2, 2.5 and 3.
• Refresh and Power Modes — Auto Refresh and Self Refresh modes supported; Auto Precharge and T_RAS lockout functionality available.
• Interface Compatibility — SSTL_2 compatible I/O signalling and parallel memory interface.
• Performance — Speed grade -5 supports FCK up to 200 MHz at CL = 3; access time specified at 700 ps.
• Timing — Write cycle time (word page) of 15 ns; commands registered on positive CK edge; data and data mask referenced to both edges of DQS; DM masks write data at both DQS edges.
• Electrical — Supply voltage range 2.5 V to 2.7 V.
• Package and Temperature — Available in 66‑pin TSOP‑II (66‑TSSOP, 0.400" / 10.16 mm width); commercial operating temperature 0 °C to +70 °C (TA).

Typical Applications

• System Memory — DDR SDRAM storage for designs requiring a 512‑Mbit parallel memory interface and programmable burst/latency control.
• High‑Speed Buffering — Read/write buffering where double‑data‑rate transfers and DQS timing are required to capture data on both edges.
• Embedded DDR Subsystems — Compact 66‑TSOP‑II package for embedded boards and modules that need 32M × 16 DDR memory density.

Unique Advantages

• Two Transfers per Clock Cycle: Double‑data‑rate architecture provides higher throughput by performing two data transfers per clock cycle.
• Flexible Timing: Programmable CAS latency (2 / 2.5 / 3) and selectable burst lengths (2, 4, 8) allow tuning for different access patterns and system timing.
• Robust I/O Timing: DQS signalling with DLL alignment and differential CK/CK̄ inputs ensures reproducible data capture and timing alignment.
• SSTL_2 Compatibility: I/O signalling compatible with SSTL_2 interfaces for straightforward integration into SSTL_2 designs.
• Compact Package: 66‑TSOP‑II footprint (0.400", 10.16 mm width) provides a small form factor for space‑constrained boards.
• Manufacturer Backing: Device specifications and options are provided by Integrated Silicon Solution, Inc., including documented speed grades and timing details.

Why Choose IS43R16320D-5TL?

The IS43R16320D-5TL combines a 512‑Mbit DDR SDRAM architecture with flexible burst and latency programming, DQS‑based data capture, and SSTL_2 compatible I/O to address parallel DDR memory requirements in compact board designs. Its -5 speed grade supports clock operation up to 200 MHz at CL = 3 and the device provides Auto Refresh and Self Refresh modes for typical DRAM maintenance.

This device is suited to designers who need a verified 32M × 16 DDR memory element in a small TSOP‑II package, backed by manufacturer documentation of timing, electrical, and package specifications.

If you would like pricing, availability, or a formal quote for the IS43R16320D-5TL, please submit a request or inquiry to receive more detailed purchasing information.