IS43R16320D-6BI-TR

The IS43R16320D-6BI-TR is a 512‑Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface and a 60‑TFBGA (8×13) package. It implements DDR double‑data‑rate architecture with bidirectional data strobes and a DLL to align data with the differential clock for high‑speed transfers.

Designed for systems requiring compact, board‑level DDR memory, the device supports programmable burst lengths and CAS latencies, SSTL_2 compatible I/O, and an industrial operating temperature range of −40°C to +85°C.

Key Features

• Memory Core  512 Mbit capacity organized as 32M × 16 with four internal banks to allow concurrent operations and pipelined Read/Write bursts.
• DDR Architecture  Double‑data‑rate operation with two data transfers per clock cycle and bidirectional data strobe (DQS) for reliable data capture.
• Data Timing and Alignment  DQS is edge‑aligned with data for READs and centre‑aligned for WRITEs; a DLL aligns DQ/DQS transitions to CLK. Commands are registered on the positive edge of CLK.
• Performance  Rated for a clock frequency around 166 MHz with an access time of 700 ps and write cycle (word page) time of 15 ns.
• Flexible Burst and Latency  Burst lengths of 2, 4 and 8 with sequential and interleave burst types, and programmable CAS latency options (2, 2.5 and 3).
• Refresh and Power Modes  Supports Auto Refresh and Self Refresh modes plus Auto Precharge for standard DRAM maintenance and power management.
• I/O and Interface  SSTL_2 compatible I/O with differential clock inputs (CK/CK̄) and Data Mask (DM) that masks write data on both edges of DQS.
• Power Supply  Operates from a 2.3 V to 2.7 V supply (VDD and VDDQ per device grade specifications).
• Package and Temperature  60‑TFBGA (8×13) package; specified operating temperature range −40°C to +85°C (TA).

Typical Applications

• High‑speed system memory  Board‑level DDR SDRAM for systems that require double‑data‑rate transfers and burst access flexibility.
• Buffer and frame memory  Use as temporary high‑throughput storage where pipelined read/write bursts and data strobes improve transfer efficiency.
• Industrial embedded systems  Memory solutions for designs that require operation across an industrial temperature range (−40°C to +85°C).

Unique Advantages

• Double‑data‑rate throughput: Two data transfers per clock cycle and DQS‑based capture provide higher effective bandwidth versus single‑rate DRAM.
• Flexible performance tuning: Programmable burst lengths and CAS latency options let designers trade latency and throughput to match system timing.
• SSTL_2 compatible I/O: Industry‑standard I/O signaling supports common DDR interfacing requirements.
• Compact board footprint: 60‑TFBGA (8×13) package supports space‑constrained designs while delivering 512 Mbit of DDR memory.
• Industrial temperature range: Specified operation from −40°C to +85°C enables deployment in temperature‑sensitive environments.
• Low‑voltage operation: 2.3 V to 2.7 V supply reduces power compared with higher‑voltage memory types while matching DDR signaling levels.

Why Choose IC DRAM 512MBIT PAR 60TFBGA?

The IS43R16320D-6BI-TR combines DDR double‑data‑rate architecture, programmable timing, and SSTL_2 I/O in a compact 60‑TFBGA package, making it suitable for designs that require compact, board‑level DDR memory with industrial temperature capability. Its internal banking and pipelined operation enable continuous burst transfers and flexible latency/burst configuration to align with system throughput requirements.

This device is appropriate for engineers specifying 512‑Mbit DDR SDRAM with a 32M × 16 organization, offering a clear set of electrical and timing parameters (2.3–2.7 V supply, ~166 MHz clock rating, 700 ps access time) documented by the manufacturer's specification.

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