IS43R16320D-6BL-TR

The IS43R16320D-6BL-TR is a 512Mbit DDR SDRAM organized as 32M × 16 that implements a double-data-rate pipeline architecture for high-speed data transfers. It provides a parallel memory interface with SSTL_2 compatible I/O and on-die features for burst access and programmable timing.

Designed for commercial-temperature systems, this device targets applications requiring high-throughput, low-latency DRAM in a compact 60-TFBGA (8×13) package, with supply operation across 2.3 V to 2.7 V.

Key Features

• Memory Core & Organization  512 Mbit DDR SDRAM organized as 32M × 16 with four internal banks to support concurrent operations.
• Double-Data-Rate Architecture  Two data transfers per clock cycle with bidirectional data strobe (DQS) for capture on both edges; DQS is edge-aligned for READs and center-aligned for WRITEs.
• Clocking & DLL  Differential clock inputs (CK/CK̄) and an internal DLL to align DQ and DQS transitions with clock transitions. Commands are registered on the positive CK edge.
• Performance & Timing  Clock frequency up to 166 MHz (specified), access time 700 ps, programmable CAS latency options (2, 2.5, 3), and write cycle time (word/Page) of 15 ns.
• Burst and Masking  Burst lengths of 2, 4 and 8 with sequential and interleave burst types; Data Mask (DM) supports masking on both edges of the data strobe.
• Refresh & Power Modes  Supports Auto Refresh and Self Refresh modes plus Auto Precharge; TRAS lockout supported (tRAP = tRCD).
• Electrical  Supply voltage range 2.3 V to 2.7 V; I/O compatible with SSTL_2 signaling.
• Package & Temperature  60-TFBGA (8×13) package; commercial operating temperature range 0°C to +70°C (TA).

Typical Applications

• Commercial embedded systems  High-throughput working memory where compact DDR SDRAM is required within a commercial temperature envelope.
• High-speed data buffering  Temporary data storage and burst transfers in systems that leverage DDR parallel memory interfaces and SSTL_2 I/O.
• System memory for controllers  External DRAM for processors or controllers that support parallel DDR SDRAM and require programmable CAS latency and burst control.

Unique Advantages

• Double-data-rate throughput: Enables two data transfers per clock cycle for increased effective bandwidth without changing clock rate.
• Flexible timing and burst control: Programmable CAS latency and selectable burst lengths (2/4/8) allow tuning for latency and bandwidth trade-offs.
• SSTL_2 compatible I/O and differential clocking: Ensures signal integrity with industry-standard SSTL_2 signaling and differential CK/CK̄ inputs.
• Integrated DLL and DQS alignment: On-die DLL and DQS timing alignment simplify meeting setup/hold requirements for high-speed read/write operations.
• Compact BGA package: 60-TFBGA (8×13) provides a small footprint for space-constrained board designs.
• Commercial temperature rating: Specified for 0°C to +70°C, suitable for a broad set of commercial applications.

Why Choose IS43R16320D-6BL-TR?

The IS43R16320D-6BL-TR combines DDR SDRAM performance features—double-data-rate transfers, programmable CAS latency, burst modes, and on-die DLL—with SSTL_2 compatible I/O in a compact 60-ball TFBGA package. Its 32M × 16 organization and four-bank architecture support concurrent operations and efficient burst transfers for systems that need reliable commercial-grade parallel DDR memory.

This device is well suited for designers seeking a verified 512Mbit DDR SDRAM building block that balances throughput, configurability, and compact packaging for commercial electronic systems. Its supported refresh and power modes also help manage data integrity and power behavior in typical operational environments.

Request a quote or contact sales to discuss availability, lead times, and pricing for IS43R16320D-6BL-TR.