IS43R16320D-6BLI-TR

The IS43R16320D-6BLI-TR is a 512‑Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface in a 60‑TFBGA (8×13) package. It implements a double‑data‑rate architecture with internal DLL, four internal banks and programmable burst/CAS settings to support high‑speed burst reads and writes.

Designed for systems requiring high throughput and flexible timing, this device offers up to 166 MHz clock operation, a 2.3 V–2.7 V supply range, and an industrial operating range of −40 °C to +85 °C, making it suitable for compact memory subsystems where performance, timing flexibility and a small footprint are priorities.

Key Features

• Memory Core & Organization  512 Mbit density organized as 32M × 16 with four internal banks to enable concurrent operations and efficient burst transfers.
• DDR Architecture  Double‑data‑rate operation provides two data transfers per clock cycle; DQS is used bidirectionally for data capture with edge‑aligned reads and centre‑aligned writes.
• Performance & Timing  Supports up to 166 MHz clock frequency and 700 ps access time; programmable burst lengths (2, 4, 8) and CAS latencies (2, 2.5, 3) for timing flexibility.
• Interfaces & Signalling  Differential clock inputs (CK/CK̄) and SSTL_2 compatible I/Os. Data and data mask (DM) are referenced to both edges of DQS for precise read/write timing.
• Power & Supply  VDD/VDDQ operation across a 2.3 V–2.7 V range; device options in the datasheet specify 2.5 V ±0.2 V and 2.6 V ±0.1 V variants.
• Refresh & Power Modes  Auto Refresh and Self Refresh modes supported to maintain data integrity during normal and low‑power conditions.
• Burst and Access Control  Burst type selection (sequential/interleave), auto precharge support and Data Mask (DM) that masks write data on both DQS edges.
• Package & Temperature  Supplied in a 60‑ball TFBGA (8×13) package with an operating temperature range of −40 °C to +85 °C (TA) for industrial applications.

Typical Applications

• High‑speed data buffering  Leverages DDR double‑data‑rate transfers and programmable burst lengths to support bursty read/write buffering in memory subsystems.
• Compact memory subsystems  60‑TFBGA (8×13) package and 512 Mbit density enable higher memory capacity in space‑constrained board designs.
• Systems requiring flexible timing  Programmable CAS latency, burst configuration and SSTL_2 I/O make the device suitable where timing tradeoffs are needed for performance tuning.

Unique Advantages

• DDR double‑data‑rate throughput: Enables two data transfers per clock cycle for increased effective bandwidth without increasing clock rate.
• Flexible timing control: Programmable burst lengths and CAS latencies let designers optimize for latency, throughput or system timing constraints.
• SSTL_2 compatible I/O and differential clock: Provides robust signal integrity and interfacing consistency for SSTL_2 memory systems.
• Compact BGA package: 60‑TFBGA (8×13) package reduces board footprint while delivering 512 Mbit of DDR memory.
• Industrial temperature support: Rated for operation from −40 °C to +85 °C (TA) to meet broader environmental requirements.
• Comprehensive refresh and power modes: Auto Refresh and Self Refresh maintain data integrity during active and low‑power states.

Why Choose IS43R16320D-6BLI-TR?

The IS43R16320D-6BLI-TR positions itself as a compact, high‑throughput DDR SDRAM solution for designs that require flexible timing, burstable transfers and SSTL_2‑compatible signaling. Its 32M × 16 organization and four internal banks support concurrent operations and efficient pipeline access patterns, while programmable CAS and burst settings enable tuning to specific system requirements.

This device is well suited for engineers and procurement teams seeking a 512‑Mbit DDR memory component that balances performance, package density and industrial temperature capability. The combination of supply voltage options, refresh features and a small 60‑ball TFBGA footprint supports scalable, reliable memory subsystem design choices.

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