IS43R16320D-6TL-TR

The IS43R16320D-6TL-TR is a 512 Mbit DDR SDRAM organized as 32M × 16 for parallel memory interfaces. It implements a double-data-rate architecture with differential clock inputs and internal DLL, delivering two data transfers per clock cycle for high-throughput read/write bursts in commercial-temperature designs.

This device targets board-level memory applications that require a 16-bit data path, SSTL_2-compatible I/O signaling, and a compact 66-TSSOP (66-TSOP II) package while operating from a 2.3 V–2.7 V supply range and 0 °C to 70 °C ambient temperature.

Key Features

• Core & DDR Architecture Double-data-rate operation provides two data transfers per clock cycle; differential clock inputs (CK/CK̄) and an internal DLL align DQ/DQS with clock transitions for reliable timing.
• Data Strobe and Mask Bidirectional data strobe (DQS) accompanies data for capture timing; Data Mask (DM) masks write data on both edges of the strobe.
• Memory Organization & Capacity 512 Mbit total capacity, internally organized as 32M × 16 with four internal banks to enable concurrent operations and burst accesses.
• Performance & Timing Rated for up to 166 MHz clock frequency (speed grade -6) with programmable CAS latency options and burst lengths of 2, 4 and 8; typical access time listed as 700 ps and write cycle time (word/page) of 15 ns.
• Power & I/O Operates from a 2.3 V–2.7 V supply range; VDD and VDDQ specified for the -6 option as 2.5 V ± 0.2 V. All I/Os are SSTL_2 compatible.
• System Features Supports Auto Refresh and Self Refresh modes, Auto Precharge, programmable burst type (Sequential/Interleave), and T_RAS lockout functionality.
• Package & Temperature Available in a 66-TSSOP (66-TSOP II) package with a commercial operating temperature range of 0 °C to +70 °C.

Typical Applications

• Board-level memory expansion — Provides 512 Mbit DDR SDRAM capacity in a compact 66-TSOP II footprint for systems requiring a 16-bit parallel memory interface.
• High-throughput buffering — Suitable for applications needing burst-mode read/write buffering using DDR transfers and programmable CAS latency.
• Commercial electronics — Designed for commercial-temperature environments (0 °C to +70 °C) and standard 2.3 V–2.7 V supply domains.
• SSTL_2-compatible designs — Fits systems that require SSTL_2 I/O signaling and DDR timing with DQS-based data capture.

Unique Advantages

• Double-data-rate throughput: Two data transfers per clock cycle increase effective data bandwidth without raising clock frequency.
• Robust capture timing: DQS-driven capture and internal DLL alignment improve timing margin for high-speed burst operations.
• Flexible burst and latency settings: Programmable burst lengths and CAS latency options enable tuning for target system performance and latency.
• SSTL_2 I/O compatibility: Direct compatibility with SSTL_2 signaling simplifies integration with matching memory controllers and I/O domains.
• Compact package: 66-TSOP II packaging provides a small board footprint for space-constrained designs.
• Commercial-grade operating range: Specified for 0 °C to +70 °C ambient operation and standard 2.3 V–2.7 V supply, matching common commercial system requirements.

Why Choose IS43R16320D-6TL-TR?

The IS43R16320D-6TL-TR delivers a compact 512 Mbit DDR SDRAM solution with DDR architecture, DQS timing, and SSTL_2-compatible I/O, making it suitable for commercial designs that require parallel 16-bit memory and high-throughput burst transfers. Its programmable latency and burst options provide flexibility to align memory behavior with system performance targets.

This device is appropriate for engineers and procurement teams specifying board-level memory in commercial electronics where a 66-TSOP II package, standard supply voltage range, and a 0 °C to +70 °C operating window are required.

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