IS43R16320E-6TL

The IS43R16320E-6TL is a 512 Mbit volatile DRAM device implemented as DDR SDRAM with a 32M × 16 memory organization. It provides a 166 MHz clock interface and SSTL_2 signaling for designs that require synchronous, high-speed parallel memory.

With a compact 66-TSSOP / 66-TSOP II package and a 2.3 V to 2.7 V supply range, this device targets systems where board space and predictable DDR timing are important, while operating across a 0 °C to 70 °C ambient range.

Key Features

• Memory Type & Architecture  512 Mbit DDR SDRAM organized as 32M × 16, providing synchronous DRAM storage in a parallel memory format.
• Performance  Designed for a 166 MHz clock frequency with an access time of 700 ps and a write cycle time (word/page) of 15 ns to meet synchronous data transfer timing requirements.
• Interface  SSTL_2 memory interface signaling for DDR operation, supporting synchronized system-level memory transactions.
• Power  Operates from a 2.3 V to 2.7 V supply range, enabling use in systems with low-voltage DDR power rails.
• Package  Available in a 66-TSSOP (0.400", 10.16 mm width) / 66-TSOP II package for compact board-level integration.
• Operating Range  Specified for ambient operation from 0 °C to 70 °C (TA), suitable for standard commercial-temperature applications.

Typical Applications

• Embedded memory subsystems  Use as on-board DDR SDRAM for embedded controllers and modules that require 512 Mbit volatile storage.
• Consumer electronics  Integration in compact devices that need synchronous parallel memory with a small-package footprint.
• Communication equipment  Deployment in systems that rely on SSTL_2 DDR signaling and predictable access/write timing for data buffering.

Unique Advantages

• DDR SDRAM organization (32M × 16): Provides a balanced word-width and density for 16-bit parallel data paths.
• Synchronized 166 MHz clock: Enables consistent timing behavior for systems designed around this DDR frequency.
• Compact 66-TSOP II package: Reduces board area while maintaining pinout density for parallel memory connections.
• Low-voltage operation: 2.3 V to 2.7 V supply range supports designs targeting low-voltage DDR rails.
• Deterministic timing specs: 700 ps access time and 15 ns write cycle time (word/page) allow precise system timing analysis.

Why Choose IS43R16320E-6TL?

The IS43R16320E-6TL delivers DDR SDRAM performance in a 512 Mbit density with a 32M × 16 organization, packaged in a compact 66-TSOP II footprint. Its specified 166 MHz clock, SSTL_2 interface, and defined timing parameters make it suitable for designs that require predictable synchronous memory behavior and a low-voltage supply.

This device is appropriate for engineers designing commercial-temperature embedded systems, consumer products, or communication equipment requiring parallel DDR memory integration, offering clear electrical and mechanical specifications to support system-level planning and validation.

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