IS43R16320E-5TL

The IS43R16320E-5TL is a 512 Mbit DDR SDRAM device organized as 32M × 16 in a 66-TSOP II package. It provides a synchronous DRAM architecture with a 200 MHz clock frequency and an SSTL_2 memory interface for systems requiring high-speed volatile memory.

This device targets designs that require compact, board-mountable DDR memory with specified operating conditions and timing characteristics, offering a balance of performance and integration for system memory subsystems.

Key Features

• Memory Core  512 Mbit density organized as 32M × 16, delivered as DDR SDRAM (volatile DRAM format).
• Performance  200 MHz clock frequency and access time of 700 ps for synchronous data transfers.
• Interface  SSTL_2 memory interface compatible with systems using SSTL signaling standards.
• Timing  Write cycle time (word page) specified at 15 ns to support predictable write operations.
• Power  Operating supply voltage range of 2.3 V to 2.7 V to meet specified DDR power domains.
• Package & Mounting  Supplied in a 66-TSSOP / 66-TSOP II package (0.400", 10.16 mm width) suitable for surface-mount assembly.
• Operating Range  Specified ambient operating temperature range of 0°C to 70°C (TA).

Typical Applications

• System Memory Subsystems  Used as DDR SDRAM memory in systems that require a 512 Mbit, 32M × 16 memory device with an SSTL_2 interface.
• Board-Level Memory Expansion  Fits designs needing a compact 66-TSOP II packaged DRAM component for board-mounted DDR memory capacity.
• High-Speed Data Buffers  Applicable where a 200 MHz clocked DDR DRAM with 700 ps access time and 15 ns write cycle time is required.

Unique Advantages

• Dense 512 Mbit Capacity: Provides substantial volatile memory in a single 32M × 16 device to reduce component count for mid-density applications.
• Synchronous DDR Architecture: 200 MHz operation and 700 ps access time enable predictable, clock-synchronous data transfers for system timing alignment.
• SSTL_2 Compatibility: Native SSTL_2 interface simplifies integration into systems using SSTL signaling for memory I/O.
• Compact Surface-Mount Package: 66-TSOP II (10.16 mm width) package supports space-constrained PCB layouts while maintaining standard assembly practices.
• Controlled Timing Parameters: Defined write cycle time (15 ns) and access timing aid deterministic memory scheduling in embedded systems.
• Wide Supply Window: 2.3 V to 2.7 V supply range accommodates standard DDR power domains while enabling stable device operation.

Why Choose IC DRAM 512MBIT PAR 66TSOP II?

The IS43R16320E-5TL positions itself as a practical DDR SDRAM option where a 512 Mbit, 32M × 16 memory element is required in a 66-TSOP II package. Its combination of 200 MHz clock operation, SSTL_2 interface, and defined timing characteristics make it suitable for designs that need reliable, board-level DDR memory with predictable performance.

Manufactured by Integrated Silicon Solution Inc (ISSI), this device is appropriate for engineers specifying mid-density volatile DRAM in space-constrained form factors and systems operating within the stated voltage and temperature ranges.

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