IS43R16320D-6TLI

The IS43R16320D-6TLI is a 512Mbit DDR SDRAM organized as 32M × 16, implemented in a parallel memory interface. It uses double-data-rate architecture with SSTL_2-compatible I/O and a differential clock scheme to support high-throughput read/write burst operations.

Designed for systems requiring a compact 66‑TSOP II footprint and industrial temperature range, the device offers programmable burst lengths and CAS latency options to match a range of performance and timing requirements.

Key Features

• DDR SDRAM Core  Double-data-rate architecture with two data transfers per clock cycle and bidirectional data strobe (DQS) for accurate data capture.
• Memory Organization  512 Mbit capacity organized as 32M × 16 with four internal banks to enable concurrent operations and burst access.
• Clock and Timing  Differential clock inputs (CK and CK̅) and an internal DLL that aligns DQ/DQS with CK; supported clock frequency up to 166 MHz for the -6 speed grade and access time of 700 ps.
• Burst and Latency Options  Burst length selectable (2, 4, 8) with sequential and interleave burst types and programmable CAS latency (2, 2.5, 3) to tune throughput and latency trade-offs.
• Write and Data Masking  Data Mask (DM) masks write data on both edges of DQS; write cycle time (word/page) specified at 15 ns.
• Refresh and Power Modes  Auto Refresh and Self Refresh modes supported for retained data during low-power intervals.
• Voltage and I/O Standard  VDD/VDDQ operating range 2.3 V to 2.7 V and SSTL_2 compatible I/O signaling.
• Package and Temperature  Available in a 66‑TSSOP (0.400", 10.16 mm width) TSOP‑II package and rated for -40 °C to +85 °C ambient operating temperature.

Typical Applications

• Parallel memory subsystems  As a 32‑bit‑organized DDR SDRAM component for systems needing parallel high-speed buffering and burst data transfers.
• Embedded platforms  For embedded designs requiring 512 Mbit of volatile DDR storage with selectable burst lengths and CAS latency.
• Compact form-factor boards  Suited to designs constrained to a 66‑TSOP II package while maintaining DDR performance and industrial temperature support.

Unique Advantages

• Flexible timing configuration: Programmable CAS latency (2, 2.5, 3) and selectable burst lengths allow designers to match memory timing to system requirements.
• High effective data rate: Double-data-rate operation with edge-aligned DQS and DLL alignment improves data capture accuracy across both clock edges.
• Compact package footprint: 66‑TSSOP (TSOP‑II) package provides a small board area for systems where PCB real estate is limited.
• Industrial temperature range: Rated for -40 °C to +85 °C to support deployments that require extended ambient temperature operation.
• SSTL_2 compatible I/O: Voltage and signaling compatibility for systems using SSTL_2 interfaces with VDD/VDDQ between 2.3 V and 2.7 V.

Why Choose IC DRAM 512MBIT PAR 66TSOP II?

The IS43R16320D-6TLI combines DDR SDRAM architecture, selectable timing parameters and a compact 66‑TSOP II package to deliver a configurable 512 Mbit parallel memory option. Its four internal banks, burst support and SSTL_2 I/O enable designers to balance throughput and latency according to system needs.

This part is appropriate for designs that require a compact, industrial‑temperature DDR memory device with flexible timing and refresh capabilities, providing predictable performance and integration in parallel memory subsystems.

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