IS43R16320D-6BLI

The IS43R16320D-6BLI is a 512‑Mbit DDR SDRAM organized as 32M × 16 and packaged in a compact 60‑TFBGA (8 × 13) footprint. It implements a double‑data‑rate architecture with SSTL_2 compatible I/O and on‑chip DLL to support high‑speed, dual‑edge data transfers for parallel memory interfaces.

This device targets designs that require a mid‑density parallel DDR memory with programmable latency and burst options, delivering a combination of configurable timing, industrial temperature support, and low‑voltage operation for system memory expansion and high‑throughput buffer storage.

Key Features

• Core / Memory 512 Mbit DDR SDRAM organized as 32M × 16 (four internal banks) to enable concurrent bank operations and continuous read/write burst access.
• Interface SSTL_2 compatible I/O with differential clock inputs (CK and CK̅) and bidirectional data strobe (DQS) transmitted/received with data for edge‑aligned READs and center‑aligned WRITEs.
• Timing & Performance Double‑data‑rate architecture (two transfers per clock); supported clock frequency up to ~166 MHz (-6 speed grade) with programmable CAS latency options of 2, 2.5 and 3 and burst lengths of 2, 4, and 8.
• Power Supply voltage range VDD/VDDQ: 2.3 V to 2.7 V, supporting low‑voltage DDR system designs.
• Reliability & Refresh Supports Auto Refresh and Self Refresh modes plus Auto Precharge; includes DLL and timing features such as tRAS lockout to support stable operation in multi‑bank access patterns.
• Package & Temperature 60‑TFBGA (8 × 13) package, operating temperature range −40 °C to +85 °C (TA) for industrial temperature applications.
• Physical / Timing Characteristics Access time ~700 ps and write cycle time (word page) of 15 ns, suitable for high‑throughput buffering and burst access patterns.

Typical Applications

• Parallel DDR memory expansion — Where a 512 Mbit (32M × 16) DDR SDRAM is required to interface with parallel memory controllers and FPGA/ASIC memory buses.
• High‑throughput buffer and frame storage — Suited for systems that utilize burst accesses and dual‑edge data transfers at up to ~166 MHz clock rate.
• Industrial embedded systems — Provides DDR storage with an operating range of −40 °C to +85 °C for temperature‑tight deployments.

Unique Advantages

• SSTL_2 compatible I/O: Enables direct interfacing with standard SSTL_2 memory controllers and PHYs without additional level‑shifting.
• Programmable timing: CAS latency options (2 / 2.5 / 3) and selectable burst lengths (2, 4, 8) allow tuning for target throughput and latency tradeoffs.
• Low‑voltage operation: 2.3 V to 2.7 V VDD/VDDQ supports low‑power system designs while maintaining DDR signaling levels.
• Compact BGA package: 60‑TFBGA (8 × 13) provides a small footprint for space‑constrained PCBs while preserving required ballout for 16‑bit parallel data paths.
• Robust refresh and power modes: Auto Refresh and Self Refresh modes reduce host refresh overhead and support power‑sensitive operation.

Why Choose IS43R16320D-6BLI?

The IS43R16320D-6BLI offers a balanced DDR SDRAM solution for designs that need a mid‑density parallel memory with configurable latency, burst behavior, and SSTL_2‑compatible signaling. Its on‑chip DLL, DQS handling, and multi‑bank architecture enable reliable dual‑edge data transfers and continuous burst throughput at the supported clock rates.

This device is well suited for engineers specifying 512‑Mbit DDR SDRAM in industrial temperature systems or compact board layouts that require a 60‑TFBGA package. The combination of programmable timing, low‑voltage operation, and standard DDR features makes it a practical choice for system memory expansion and high‑speed buffering requirements.

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