IS43R16320D-6BL

The IS43R16320D-6BL is a 512-Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface in a 60-TFBGA (8×13) package. It implements double-data-rate architecture with pipelined operation and internal DLL to support high-throughput read/write bursts.

Designed for commercial-temperature systems, the device provides programmable burst lengths and CAS latencies, SSTL_2-compatible I/O, and supply operation at 2.3 V–2.7 V—offering a balanced combination of speed, timing flexibility, and board-level density for memory subsystems.

Key Features

• Core / Architecture Double-data-rate (DDR) architecture with internal DLL; four internal banks enable concurrent operations and pipelined read/write bursts.
• Memory Organization 512 Mbit total capacity, internally organized as 32M × 16 for 16-bit data width.
• Data Transfer and Timing Bidirectional data strobe (DQS) transmitted/received with data; DQS edge-aligned for READs and centre-aligned for WRITEs. Supports burst lengths of 2, 4 and 8 and burst types sequential and interleave.
• Programmable Latency and Refresh Programmable CAS latency options (2, 2.5 and 3). Supports Auto Refresh and Self Refresh modes plus Auto Precharge and tRAS lockout functionality.
• Clock and Command Interface Differential clock inputs and commands registered on the positive clock edge; data and data mask referenced to both edges of DQS. Product clock frequency listed at 166 MHz; datasheet speed grade (-6) indicates Fck up to 167 MHz (CL=3).
• Power and I/O VDD and VDDQ supply range 2.3 V–2.7 V (datasheet notes VDD/VDDQ 2.5 V ±0.2 V for -6). All I/Os are SSTL_2 compatible; Data Mask (DM) masks write data at both edges of DQS.
• Performance Parameters Typical access time listed as 700 ps and write cycle time (word page) of 15 ns.
• Package and Temperature 60-TFBGA (8×13) package; commercial operating temperature range 0°C to +70°C (TA).

Unique Advantages

• Flexible timing configuration: Programmable CAS latencies (2, 2.5, 3) and selectable burst lengths let designers tune throughput and latency to system requirements.
• SSTL_2-compatible I/O: Interfaces directly with SSTL_2 signaling environments for reliable DDR data transfers using differential clocking and DQS.
• Compact ball-grid package: 60-TFBGA (8×13) offers a compact footprint for space-constrained board designs while providing a 16-bit data path.
• Power range suited to DDR systems: 2.3 V–2.7 V supply range aligns with documented VDD/VDDQ tolerances for -6 speed grade, simplifying power-rail planning.
• Robust refresh and low-power modes: Auto Refresh and Self Refresh support preserves data integrity during standby without external refresh management.
• Deterministic data capture: DQS timing (edge- and center-alignment behavior) and DLL alignment improve predictability of data capture for both reads and writes.

Why Choose IS43R16320D-6BL?

IS43R16320D-6BL is positioned as a commercial-temperature 512-Mbit DDR SDRAM option that combines standard DDR features—programmable CAS latency, multiple burst options, SSTL_2 I/O—and a compact 60-ball TFBGA package for space-efficient memory subsystems. Its supply range (2.3 V–2.7 V), defined timing parameters, and support for Auto/Self Refresh make it suitable for designs requiring a 16-bit parallel DDR memory with predictable timing behavior.

This device is appropriate for engineers specifying board-level DDR memory where package density, configurable latency/burst modes, and standard SSTL_2 signaling are required. The documented timing and electrical parameters provide verifiable design points for performance and power budgeting during system integration.

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