 | | IS43DR86400E-3DBL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 104 | |
 | | IS43DR86400E-3DBL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 120 | |
 | | IS43DR86400E-3DBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 582 | |
 | | IS43DR86400E-3DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 171 | |
 | N/A | IS43LQ32K01S2A-046BLI | Integrated Silicon Solution Inc | IC DRAM 32G LVSTL 2.1GHZ TFBGA | Memory | 200-TFBGA (10x14.5) | 0.57V ~ 0.65V, 1.06V ~ 1.17V, 1.70V ~ 1.95V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 473 | |
 | N/A | IS43LQ32K01S2A-046BLI-TR | Integrated Silicon Solution Inc | 32G, 1.06-1.17/1.70-1.95V, LPDDR | Memory | 200-TFBGA (10x14.5) | 0.57V ~ 0.65V, 1.06V ~ 1.17V, 1.70V ~ 1.95V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,306 | |
 | N/A | IS43LQ32K01S2A-053BLI | Integrated Silicon Solution Inc | 32G, 1.06-1.17/1.70-1.95V, LPDDR | Memory | 200-TFBGA (10x14.5) | 0.57V ~ 0.65V, 1.06V ~ 1.17V, 1.70V ~ 1.95V | -40°C ~ 95°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 306 | |
 | N/A | IS43LQ32K01S2A-053BLI-TR | Integrated Silicon Solution Inc | 32G, 1.06-1.17/1.70-1.95V, LPDDR | Memory | 200-TFBGA (10x14.5) | 0.57V ~ 0.65V, 1.06V ~ 1.17V, 1.70V ~ 1.95V | -40°C ~ 95°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 578 | |
 | | IS43R16160B-5TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 900 | |
 | | IS43R16160B-5TLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,164 | |
 | | IS43R16160B-5TLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,607 | |
 | | IS43R16160B-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,258 | |
 | | IS43R16160B-6TLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 623 | |
 | | IS43R16160B-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 684 | |
 | | IS43R16160D-5BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 109 | |
 | | IS43R16160D-5BLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 199 | |
 | | IS43R16160D-5TL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 665 | |
 | | IS43R16160D-5TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,159 | |
 | | IS43R16160D-5TLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,216 | |
 | | IS43R16160D-6BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 761 | |