 | | MT48LC8M8A2P-75 IT:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 78 | |
 | | MT48LC8M8A2P-75 IT:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,544 | |
 | | MT48LC8M8A2P-75:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 161 | |
 | | MT48LC8M8A2P-75:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,645 | |
 | | MT48LC8M8A2TG-75:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 805 | |
 | | MT49H16M16FM-5 TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 144UBGA | DRAM Memory | 144-�BGA (18.5x11) | 1.7V ~ 1.95V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,405 | |
| N/A | N/A | MT52L1G32D4PG-093 WT ES:B | Micron Technology Inc. | IC DRAM 32GBIT 1067MHZ 178FBGA | DRAM Memory | 178-FBGA (12x11.5) | 1.2V | -30°C ~ 85°C (TC) | Clock Frequency: 1.067 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 1,262 | |
| N/A | N/A | MT52L1G32D4PG-093 WT:B | Micron Technology Inc. | IC DRAM 32GBIT 1067MHZ 178FBGA | DRAM Memory | 178-FBGA (12x11.5) | 1.2V | -30°C ~ 85°C (TC) | Clock Frequency: 1.067 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 1,395 | |
| N/A | N/A | MT52L1G32D4PG-093 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 1.066GHZ 178FBGA | DRAM Memory | 178-FBGA (12x11.5) | 1.2V | -30°C ~ 85°C (TC) | Clock Frequency: 1.066 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 291 | |
| N/A | N/A | MT52L1G32D4PG-107 WT:B | Micron Technology Inc. | IC DRAM 32GBIT 933MHZ 178FBGA | DRAM Memory | 178-FBGA (12x11.5) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 1,312 | |
| N/A | N/A | MT52L1G32D4PG-107 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 933MHZ 178FBGA | DRAM Memory | 178-FBGA (12x11.5) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 1,280 | |
| N/A | N/A | MT52L1G64D8QC-107 WT ES:B | Micron Technology Inc. | IC DRAM 64GBIT 933MHZ 253VFBGA | DRAM Memory | 253-VFBGA (12x12) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 1,008 | |
| N/A | N/A | MT52L1G64D8QC-107 WT:B | Micron Technology Inc. | IC DRAM 64GBIT 933MHZ 253VFBGA | DRAM Memory | 253-VFBGA (12x12) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 936 | |
| N/A | N/A | MT52L1G64D8QC-107 WT:B TR | Micron Technology Inc. | IC DRAM 64GBIT 933MHZ 253VFBGA | DRAM Memory | 253-VFBGA (12x12) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 184 | |
| N/A | N/A | MT52L512M64D4GN-107 WT ES:B TR | Micron Technology Inc. | IC DRAM 32GBIT 933MHZ 256FBGA | DRAM Memory | 256-FBGA (14x14) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 1,085 | |
| N/A | N/A | MT52L512M64D4GN-107 WT:B | Micron Technology Inc. | IC DRAM 32GBIT 933MHZ 256FBGA | DRAM Memory | 256-FBGA (14x14) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 584 | |
| N/A | N/A | MT52L512M64D4GN-107 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 933MHZ 256FBGA | DRAM Memory | 256-FBGA (14x14) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 203 | |
| N/A | N/A | MT52L512M64D4PQ-093 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 1067MHZ 253VFBGA | DRAM Memory | 253-VFBGA (11x11.5) | 1.2V | -30°C ~ 85°C (TC) | Clock Frequency: 1.067 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 81 | |
| N/A | N/A | MT52L512M64D4PQ-107 WT:B | Micron Technology Inc. | IC DRAM 32GBIT 933MHZ 253VFBGA | DRAM Memory | 253-VFBGA (11x11.5) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 1,134 | |
| N/A | N/A | MT52L512M64D4PQ-107 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 933MHZ 253VFBGA | DRAM Memory | 253-VFBGA (11x11.5) | 1.2V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 917 | |